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公开(公告)号：US20220121101A1
公开(公告)日：2022-04-21
申请号：US17347322
申请日：2021-06-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Kevin TANADY , Pei-Cheng HSU , Ta-Cheng LIEN , Tzu-Yi WANG , Hsin-Chang LEE
IPC: G03F1/24 , G03F1/54 , H01L21/033
Abstract: An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.
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