公开(公告)号：US12092952B2

公开(公告)日：2024-09-17

申请号：US17347322

申请日：2021-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kevin Tanady ,  Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Tzu-Yi Wang ,  Hsin-Chang Lee

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

CPC classification number: G03F1/24 ,  G03F1/54 ,  H01L21/0332 ,  H01L21/0337

Abstract: An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.