公开(公告)号：US08946095B2

公开(公告)日：2015-02-03

申请号：US13660363

申请日：2012-10-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li Chen ,  Jyh-Nan Lin ,  Chin-Feng Sun ,  Po-Hsiung Leu ,  Ding-I Liu

IPC: H01L21/469 ,  H01L21/283

CPC classification number: H01L21/283 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/76801

Abstract: A method of forming an interlayer dielectric film above a metal gate of a metal oxide semiconductor device comprises forming a metal gate above a semiconductor substrate; and forming the interlayer dielectric film above the metal gate by reacting a silicon-containing compound as precursor and a reactant for oxidizing the silicon-containing compound. The silicon-containing compound has the formula: Six(A)y(B)z(C)m(D)n  (I) wherein x is in the range of from 1 to 9; y+z+m+n is in the range of from 4 to 20; and A, B, C, and D independently represent a functional group connecting with a silicon atom. The functional group is selected from a group consisting of alkyl, alkenyl, alkynyl, aryl, alkylaryl, alkoxyl, alkylcarbonyl, carboxyl, alkylcarbonyloxy, amide, amino, alkylcarbonylamino, —NO2, and —CN.

Abstract translation: 在金属氧化物半导体器件的金属栅极上形成层间电介质膜的方法包括在半导体衬底上形成金属栅极; 以及通过使含硅化合物作为前体和用于氧化含硅化合物的反应物反应，在金属栅上方形成层间电介质膜。 含硅化合物具有下式：其中x在1至9的范围内的六（A）y（B）z（C）m（D）n（I） y + z + m + n在4至20的范围内; A，B，C和D独立地表示与硅原子连接的官能团。 官能团选自烷基，烯基，炔基，芳基，烷基芳基，烷氧基，烷基羰基，羧基，烷基羰基氧基，酰胺，氨基，烷基羰基氨基，-NO 2和-CN。

公开(公告)号：US10373906B2

公开(公告)日：2019-08-06

申请号：US15492603

申请日：2017-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jyh-Nan Lin ,  Tsung-Dar Lee ,  Li Chen

IPC: H01L23/522 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532

Abstract: Structures and formation methods of a semiconductor device structure are provided. A method includes depositing a first layer including Al atoms to cover a first dielectric layer in a first conductive feature. The method also includes depositing a second layer including N atoms over the first layer. The first layer and the second layer form an etch stop layer including aluminum nitride. The etch stop layer includes vacancies and has an atomic percentage of Al to Al and N. The method also includes filling the vacancies in the etch stop layer with additional N atoms to reduce the atomic percentage of Al to Al and N. In addition, the method includes forming a second dielectric layer over the etch stop layer. The method also includes forming a second conductive feature in the second dielectric layer and the etch stop layer to be connected to the first conductive feature.