公开(公告)号：US10508953B2

公开(公告)日：2019-12-17

申请号：US15490075

申请日：2017-04-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-An Yang ,  Hao-Ming Chang ,  Shao-Chi Wei ,  Kuo-Chin Lin ,  Sheng-Chang Hsu ,  Li-Chih Lu ,  Cheng-Ming Lin

IPC: G01J5/00 ,  H01L21/67 ,  G01J5/10

Abstract: A method for processing a substrate is provided. The method includes supplying a first flow of a chemical solution into a processing chamber, configured to process the substrate, via a first dispensing nozzle. The method further includes producing a first thermal image of the first flow of the chemical solution. The method also includes performing an image analysis on the first thermal image. In addition, the method includes moving the substrate into the processing chamber when the result of the analysis of the first thermal image is within the allowable deviation from the baseline.

公开(公告)号：US10459332B2

公开(公告)日：2019-10-29

申请号：US15470933

申请日：2017-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hao-Ming Chang ,  Chih-Ming Chen ,  Cheng-Ming Lin ,  Sheng-Chang Hsu ,  Shao-Chi Wei ,  Hsao Shih ,  Li-Chih Lu

IPC: G03F7/26 ,  G03F1/26 ,  H01L21/027 ,  G03F1/38

Abstract: A method of fabricating a photomask includes providing a mask blank; removing a portion of the resist layer to form a patterned resist layer exposing a portion of the cooling layer; patterning the cooling layer by using the patterned resist layer as an etching mask; patterning the opaque layer; and removing the patterned resist layer and the patterned cooling layer. The mask blank includes a light-transmitting substrate and an opaque layer, a cooling layer, and a resist layer sequentially stacked thereon, wherein the cooling layer has a thermal conductivity ranging between 160 and 5000 and an effective atomic number ranging between 5 and 14.

公开(公告)号：US20180284601A1

公开(公告)日：2018-10-04

申请号：US15470933

申请日：2017-03-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hao-Ming Chang ,  Chih-Ming Chen ,  Cheng-Ming Lin ,  Sheng-Chang Hsu ,  Shao-Chi Wei ,  Hsao Shih ,  Li-Chih Lu

IPC: G03F1/76 ,  H01L21/027 ,  G03F1/78 ,  G03F1/26 ,  G03F1/50

CPC classification number: G03F1/26 ,  G03F1/38 ,  H01L21/0274

Abstract: A method of fabricating a photomask includes providing a blank mask; removing a portion of the resist layer to form a patterned resist layer exposing a portion of the cooling layer; patterning the cooling layer by using the patterned resist layer as an etching mask; patterning the opaque layer; and removing the patterned resist layer and the patterned cooling layer. The blank mask includes a light-transmitting substrate and an opaque layer, a cooling layer, and a resist layer sequentially stacked thereon, wherein the cooling layer has a thermal conductivity ranging between 160 and 5000 and an effective atomic number ranging between 5 and 14.