公开(公告)号：US10008418B2

公开(公告)日：2018-06-26

申请号：US15282981

申请日：2016-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Wei Yu ,  Chia-Ping Lo ,  Liang-Gi Yao ,  Weng Chang ,  Yee-Chia Yeo ,  Ziwei Fang

IPC: H01L29/66 ,  H01L21/3105 ,  H01L21/8238 ,  H01L21/336 ,  H01L21/324 ,  H01L21/02 ,  H01L21/268

CPC classification number: H01L21/823821 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/268 ,  H01L21/324 ,  H01L21/3247 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823828 ,  H01L21/823878 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method of semiconductor device fabrication includes providing a substrate including a first fin element and a second fin element extending from the substrate. A first layer is formed over the first and second fin elements, where the first layer includes a gap. A laser anneal process is performed to the substrate to remove the gap in the first layer. An energy applied to the first layer during the laser anneal process is adjusted based on a height of the first layer.

公开(公告)号：US10861751B2

公开(公告)日：2020-12-08

申请号：US16687152

申请日：2019-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Wei Yu ,  Chia Ping Lo ,  Liang-Gi Yao ,  Weng Chang ,  Yee-Chia Yeo ,  Ziwei Fang

IPC: H01L21/8238 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H01L29/66

Abstract: A method includes providing a substrate including a first fin element and a second fin element extending from the substrate, and forming a first layer including a first material over the first and second fin elements, wherein the first layer includes a gap disposed between the first and second fin elements. An anneal process is performed to remove the gap in the first layer, wherein performing the anneal process includes adjusting an energy applied to the first layer during the anneal process. The gap is filled by a portion of the first material around the gap reaching a sub-melt temperature that is different from a melting point of the first material.

公开(公告)号：US10483170B2

公开(公告)日：2019-11-19

申请号：US16016862

申请日：2018-06-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Wei Yu ,  Chia Ping Lo ,  Liang-Gi Yao ,  Weng Chang ,  Yee-Chia Yeo ,  Ziwei Fang

IPC: H01L21/02 ,  H01L21/268 ,  H01L21/324 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66

Abstract: A method includes providing a substrate including a first fin element and a second fin element extending from the substrate. A first layer including an amorphous material is formed over the first and second fin elements, where the first layer includes a gap disposed between the first and second fin elements. An anneal process is performed to remove the gap in the first layer. The amorphous material of the first layer remains amorphous during the performing of the anneal process.