公开(公告)号：US20230064000A1

公开(公告)日：2023-03-02

申请号：US17459469

申请日：2021-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lung CHEN

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/78 ,  H01L29/08

Abstract: The present disclosure describes a semiconductor structure and a method for forming the same. The method can include forming a recess structure in a substrate and forming a first semiconductor layer over the recess structure. The process of forming the first semiconductor layer can include doping first and second portions of the first semiconductor layer with a first n-type dopant having first and second doping concentrations, respectively. The second doping concentration can be greater than the first doping concentration. The method can further include forming a second semiconductor layer over the second portion of the first semiconductor layer. The process of forming the second semiconductor layer can include doping the second semiconductor layer with a second n-type dopant.

公开(公告)号：US20170033194A1

公开(公告)日：2017-02-02

申请号：US14815349

申请日：2015-07-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lung CHEN ,  Kang-Min KUO ,  Wen-Hsin CHAN

IPC: H01L29/66 ,  H01L29/06 ,  H01L21/762 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L21/76232 ,  H01L21/823431 ,  H01L29/0653 ,  H01L29/7851

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first fin structure over a semiconductor substrate. The semiconductor device structure also includes a second fin structure over the semiconductor substrate. The second fin structure has a lower height than that of the first fin structure. The second fin structure includes a first sidewall and a second sidewall, and the first sidewall and the second sidewall surround a recess over the second fin structure.

Abstract translation: 提供半导体器件结构的结构和形成方法。 半导体器件结构包括半导体衬底上的第一鳍结构。 半导体器件结构还包括半导体衬底上的第二鳍结构。 第二鳍结构具有比第一鳍结构低的高度。 第二鳍结构包括第一侧壁和第二侧壁，并且第一侧壁和第二侧壁围绕第二鳍结构的凹陷。

公开(公告)号：US20160293702A1

公开(公告)日：2016-10-06

申请号：US14704324

申请日：2015-05-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Lung CHEN ,  Kang-Min KUO ,  Wen-Hsin CHAN

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/66 ,  H01L29/165

CPC classification number: H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate. The semiconductor device structure also includes a source/drain structure over the semiconductor substrate, and the source/drain structure includes a dopant. The semiconductor device structure further includes a channel region under the gate stack. In addition, the semiconductor device structure includes a semiconductor layer surrounding the source/drain structure. The semiconductor layer is configured to prevent the dopant from entering the channel region.

Abstract translation: 提供半导体器件结构的结构和形成方法。 半导体器件结构包括半导体衬底上的栅极堆叠。 半导体器件结构还包括半导体衬底上的源极/漏极结构，并且源极/漏极结构包括掺杂剂。 该半导体器件结构还包括在栅极堆叠下面的沟道区域。 此外，半导体器件结构包括围绕源极/漏极结构的半导体层。 半导体层被配置为防止掺杂剂进入沟道区域。

公开(公告)号：US20200343360A1

公开(公告)日：2020-10-29

申请号：US16928942

申请日：2020-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lung CHEN ,  Kang-Min KUO ,  Wen-Hsin CHAN

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/8234

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dummy fin structure, and forming a mask layer covering the dummy fin structure. The method also includes removing a portion of the mask layer and a top portion of the dummy fin structure by a first etching operation to form an etched mask layer, wherein the dummy fin structure has a protruding portion protruding from a top surface of the etched mask layer after the first etching operation.

公开(公告)号：US20200295136A1

公开(公告)日：2020-09-17

申请号：US16889511

申请日：2020-06-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Lung CHEN ,  Kang-Min KUO ,  Long-Jie HONG

IPC: H01L29/08 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/167 ,  H01L29/165 ,  H01L29/78

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure has a channel region and a source/drain region. A gate structure is formed over the channel region of the fin structure. A first source/drain etching is performed to recess the source/drain region of the fin structure. After the first source/drain etching, a second source/drain etching is performed to further recess the source/drain region of the fin structure. After the second source/drain etching, a third source/drain etching is performed to further recess the source/drain region of the fin structure, thereby forming a source/drain recess. One or more epitaxial layers are formed in the source/drain recess. The first source/drain etching is isotropic etching and the second source/drain etching is anisotropic etching.

公开(公告)号：US20200066873A1

公开(公告)日：2020-02-27

申请号：US16668787

申请日：2019-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lung CHEN ,  Kang-Min KUO ,  Wen-Hsin CHAN

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/8234

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dummy fin structure over a semiconductor substrate, and forming a mask layer covering the dummy fin structure. The method further includes irradiating the mask layer, so that the mask layer is divided into an unirradiated portion and an irradiated portion, and the irradiated portion is over the dummy fin structure. The method also includes removing a top portion of the irradiated portion and a top portion of the dummy fin structure by a first etching operation, such that the dummy fin structure has a convex top surface after the first etching operation. The method includes removing a middle portion of the dummy fin structure by a second etching operation, such that the dummy fin structure has a concave top surface after the second etching operation.

公开(公告)号：US20200020771A1

公开(公告)日：2020-01-16

申请号：US16036302

申请日：2018-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Lung CHEN ,  Kang-Min KUO ,  Long-Jie HONG

IPC: H01L29/08 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/167 ,  H01L29/165 ,  H01L29/78

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure has a channel region and a source/drain region. A gate structure is formed over the channel region of the fin structure. A first source/drain etching is performed to recess the source/drain region of the fin structure. After the first source/drain etching, a second source/drain etching is performed to further recess the source/drain region of the fin structure. After the second source/drain etching, a third source/drain etching is performed to further recess the source/drain region of the fin structure, thereby forming a source/drain recess. One or more epitaxial layers are formed in the source/drain recess. The first source/drain etching is isotropic etching and the second source/drain etching is anisotropic etching.

公开(公告)号：US20190109206A1

公开(公告)日：2019-04-11

申请号：US16208157

申请日：2018-12-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Lung CHEN ,  Kang-Min KUO ,  Wen-Hsin CHAN

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/78 ,  H01L29/06

Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first fin structure and a second fin structure over a semiconductor substrate, and forming a mask layer covering the first fin structure and the second fin structure. The method also includes performing a first etching operation using the second fin structure as an etch stop layer to partially remove the mask layer such that the etch stop layer protrudes from the mask layer after the first etching operation. The method further includes partially removing the second fin structure using a second etching operation after the first etching operation.