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    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20200295136A1

    公开(公告)日：2020-09-17

    申请号：US16889511

    申请日：2020-06-01

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Lung CHEN ,  Kang-Min KUO ,  Long-Jie HONG

    IPC: H01L29/08 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/167 ,  H01L29/165 ,  H01L29/78

    Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure has a channel region and a source/drain region. A gate structure is formed over the channel region of the fin structure. A first source/drain etching is performed to recess the source/drain region of the fin structure. After the first source/drain etching, a second source/drain etching is performed to further recess the source/drain region of the fin structure. After the second source/drain etching, a third source/drain etching is performed to further recess the source/drain region of the fin structure, thereby forming a source/drain recess. One or more epitaxial layers are formed in the source/drain recess. The first source/drain etching is isotropic etching and the second source/drain etching is anisotropic etching.

    SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
    3.
    发明申请
    SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME 有权
    半导体器件结构及其形成方法

    公开(公告)号：US20170053868A1

    公开(公告)日：2017-02-23

    申请号：US14832655

    申请日：2015-08-21

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Shu-Cheng LIN ,  Chih-Lin WANG ,  Kang-Min KUO

    IPC: H01L23/522 ,  H01L21/02 ,  H01L23/532 ,  H01L21/311 ,  H01L23/528 ,  H01L21/768

    CPC classification number: H01L21/76877 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76831 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295

    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure over the substrate. The semiconductor device structure includes a first dielectric layer over the substrate. The first dielectric layer has a first opening exposing the first conductive structure. The semiconductor device structure includes a seal layer covering an inner wall of the first opening and in direct contact with the first dielectric layer. The seal layer includes a dielectric material including an oxygen compound. The semiconductor device structure includes a second conductive structure filled in the first opening and surrounded by the seal layer. The second conductive structure is electrically connected to the first conductive structure.

    Abstract translation: 提供半导体器件结构。 半导体器件结构包括衬底。 半导体器件结构包括在衬底上的第一导电结构。 半导体器件结构包括在衬底上的第一介电层。 第一电介质层具有暴露第一导电结构的第一开口。 半导体器件结构包括覆盖第一开口的内壁并与第一介电层直接接触的密封层。 密封层包括包含氧化合物的电介质材料。 半导体器件结构包括填充在第一开口中并被密封层包围的第二导电结构。 第二导电结构电连接到第一导电结构。

    STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH A DUMMY FIN STRUCTURE
    8.
    发明申请
    STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH A DUMMY FIN STRUCTURE 审中-公开

    公开(公告)号：US20200066873A1

    公开(公告)日：2020-02-27

    申请号：US16668787

    申请日：2019-10-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Lung CHEN ,  Kang-Min KUO ,  Wen-Hsin CHAN

    IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/8234

    Abstract: Structures and formation methods of a semiconductor device structure are provided. The method includes forming a dummy fin structure over a semiconductor substrate, and forming a mask layer covering the dummy fin structure. The method further includes irradiating the mask layer, so that the mask layer is divided into an unirradiated portion and an irradiated portion, and the irradiated portion is over the dummy fin structure. The method also includes removing a top portion of the irradiated portion and a top portion of the dummy fin structure by a first etching operation, such that the dummy fin structure has a convex top surface after the first etching operation. The method includes removing a middle portion of the dummy fin structure by a second etching operation, such that the dummy fin structure has a concave top surface after the second etching operation.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开

    公开(公告)号：US20200020771A1

    公开(公告)日：2020-01-16

    申请号：US16036302

    申请日：2018-07-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Lung CHEN ,  Kang-Min KUO ,  Long-Jie HONG

    IPC: H01L29/08 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/02 ,  H01L29/167 ,  H01L29/165 ,  H01L29/78

    Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure has a channel region and a source/drain region. A gate structure is formed over the channel region of the fin structure. A first source/drain etching is performed to recess the source/drain region of the fin structure. After the first source/drain etching, a second source/drain etching is performed to further recess the source/drain region of the fin structure. After the second source/drain etching, a third source/drain etching is performed to further recess the source/drain region of the fin structure, thereby forming a source/drain recess. One or more epitaxial layers are formed in the source/drain recess. The first source/drain etching is isotropic etching and the second source/drain etching is anisotropic etching.

    SEMICONDUCTOR DEVICE HAVING FINS
    10.
    发明申请
    SEMICONDUCTOR DEVICE HAVING FINS 审中-公开

    公开(公告)号：US20190355814A1

    公开(公告)日：2019-11-21

    申请号：US16525346

    申请日：2019-07-29

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Cong-Min FANG ,  Kang-Min KUO ,  Shi-Min WU

    IPC: H01L29/06 ,  H01L21/762

    Abstract: A semiconductor device includes a semiconductive substrate, a first semiconductive fin and a second semiconductive fin extending upwards from the semiconductive substrate, an isolation structure at least partially between the first semiconductive fin and the second semiconductive fin, a first semiconductive raised portion and a second semiconductive raised portion. The first semiconductive raised portion extends upwards from the semiconductive substrate, is buried under the isolation structure, and is between the first semiconductive fin and the second semiconductive fin. A top surface of the first semiconductive fin is higher than a top surface of the first semiconductive raised portion. The second semiconductive raised portion extends upwards from the semiconductive substrate, is buried under the isolation structure, and is between the first semiconductive raised portion and the second semiconductive fin.

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