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公开(公告)号：US20140264348A1
公开(公告)日：2014-09-18
申请号：US13873323
申请日：2013-04-30
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD.
Inventor： Chun Hsiung Tsai , Yi-Fang Pai , Chien-Chang Su , Tzu-Chun Tseng , Meng-Yueh Liu
CPC classification number: C30B25/165 , C30B25/16 , C30B29/06 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/66795 , H01L29/7848 , H01L29/785 , Y10S438/938
Abstract: The present disclosure relates to a method of forming an epitaxial layer through asymmetric cyclic deposition etch (CDE) epitaxy. An initial layer growth rate of one or more cycles of the CDE process are designed to enhance a crystalline quality of the epitaxial layer. A growth rate of the epitaxial material may be altered by adjusting a flow rate of one or more silicon-containing precursors within a processing chamber wherein the epitaxial growth takes place. An etch rate may also be altered by adjusting a temperature or partial pressure of one or more vapor etchants, or the temperature within the processing chamber. In some embodiments, an initial layer thickness that is greater than a critical thickness of the epitaxial material for strain relaxation is achieved with a low growth rate, followed by a high growth rate for the remainder of epitaxial growth. Other methods are also disclosed.
Abstract translation: 本公开内容涉及通过不对称循环沉积蚀刻（CDE）外延形成外延层的方法。 设计CDE工艺的一个或多个循环的初始层生长速率以增强外延层的结晶质量。 外延材料的生长速率可以通过调节在外延生长发生的处理室内的一种或多种含硅前体的流速来改变。 还可以通过调节一种或多种蒸气蚀刻剂的温度或分压或处理室内的温度来改变蚀刻速率。 在一些实施例中，以低生长速率实现大于用于应变松弛的外延材料的临界厚度的初始层厚度，随后对于外延生长的其余部分具有高生长速率。 还公开了其它方法。
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公开(公告)号：US09564321B2
公开(公告)日：2017-02-07
申请号：US13792261
申请日：2013-03-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun Hsiung Tsai , Meng-Yueh Liu , Chien-Chang Su , Yuan-Feng Chao , Yuh-Da Fan
IPC: H01L21/20 , H01L21/36 , H01L21/02 , H01L21/3065
CPC classification number: H01L21/0262 , H01L21/02532 , H01L21/02576 , H01L21/02639 , H01L21/02656 , H01L21/3065
Abstract: A cyclic deposition and etch method is provided. The method includes depositing an epitaxial layer over a substrate at a first temperature and etching a portion of the deposited epitaxial layer at a variable temperature higher than the first temperature. The step of etching is performed while varying the temperature.
Abstract translation: 提供了循环沉积和蚀刻方法。 该方法包括在第一温度下在衬底上沉积外延层，并在高于第一温度的可变温度下蚀刻沉积的外延层的一部分。 在改变温度的同时进行蚀刻步骤。
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公开(公告)号：US08906789B2
公开(公告)日：2014-12-09
申请号：US13873323
申请日：2013-04-30
Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
Inventor： Chun Hsiung Tsai , Yi-Fang Pai , Chien-Chang Su , Tzu-Chun Tseng , Meng-Yueh Liu
CPC classification number: C30B25/165 , C30B25/16 , C30B29/06 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/66795 , H01L29/7848 , H01L29/785 , Y10S438/938
Abstract: The present disclosure relates to a method of forming an epitaxial layer through asymmetric cyclic deposition etch (CDE) epitaxy. An initial layer growth rate of one or more cycles of the CDE process are designed to enhance a crystalline quality of the epitaxial layer. A growth rate of the epitaxial material may be altered by adjusting a flow rate of one or more silicon-containing precursors within a processing chamber wherein the epitaxial growth takes place. An etch rate may also be altered by adjusting a temperature or partial pressure of one or more vapor etchants, or the temperature within the processing chamber. In some embodiments, an initial layer thickness that is greater than a critical thickness of the epitaxial material for strain relaxation is achieved with a low growth rate, followed by a high growth rate for the remainder of epitaxial growth. Other methods are also disclosed.
Abstract translation: 本公开内容涉及通过不对称循环沉积蚀刻（CDE）外延形成外延层的方法。 设计CDE工艺的一个或多个循环的初始层生长速率以增强外延层的结晶质量。 外延材料的生长速率可以通过调节在外延生长发生的处理室内的一种或多种含硅前体的流速来改变。 还可以通过调节一种或多种蒸气蚀刻剂的温度或分压或处理室内的温度来改变蚀刻速率。 在一些实施例中，以低生长速率实现大于用于应变松弛的外延材料的临界厚度的初始层厚度，随后对于外延生长的其余部分具有高生长速率。 还公开了其它方法。
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