公开(公告)号：US11843056B2

公开(公告)日：2023-12-12

申请号：US17377664

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Neil Quinn Murray ,  Katherine H. Chiang ,  Chung-Te Lin

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/78642 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/1255

Abstract: A semiconductor structure is provided. The semiconductor structure may include a transistor structure, the transistor structure may include a gate region arranged over an upper surface of a substrate and extending substantially in a first direction that is perpendicular to the upper surface of the substrate; a first source/drain region over the upper surface of the substrate; a second source/drain region over the upper surface of the substrate; and a channel region vertically extending in the first direction between the first source/drain region and the second source/drain region, wherein the channel region comprises an oxide semiconductor material. Along the first direction, the gate region covers a sidewall of the channel region.

公开(公告)号：US20220320347A1

公开(公告)日：2022-10-06

申请号：US17377664

申请日：2021-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Neil Quinn Murray ,  Katherine H. Chiang ,  Chung-Te Lin

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor structure is provided. The semiconductor structure may include a transistor structure, the transistor structure may include a gate region arranged over an upper surface of a substrate and extending substantially in a first direction that is perpendicular to the upper surface of the substrate; a first source/drain region over the upper surface of the substrate; a second source/drain region over the upper surface of the substrate; and a channel region vertically extending in the first direction between the first source/drain region and the second source/drain region, wherein the channel region comprises an oxide semiconductor material. Along the first direction, the gate region covers a sidewall of the channel region.