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1.发明授权公开(公告)号：US09660188B2
公开(公告)日：2017-05-23
申请号：US14471082
申请日：2014-08-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Po-ken Lin , Chang-Ming Wu , Chern-Yow Hsu , Shih-Chang Liu
CPC classification number: H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1286 , H01L45/1675
Abstract: A phase change memory (PCM) cell with a heating element electrically isolated from laterally surrounding regions of the PCM cell by a cavity is provided. A dielectric region is arranged between first and second conductors. A heating plug is arranged within a hole extending through the dielectric region to the first conductor. The heating plug includes a heating element running along sidewalls of the hole, and includes a sidewall structure including a cavity arranged between the heating element and the sidewalls. A phase change element is in thermal communication with the heating plug and arranged between the heating plug and the second conductor. Also provide is a method for manufacturing the PCM cell.
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2.发明申请Phase Change Memory Structure to Reduce Leakage from the Heating Element to the Surrounding Material 有权相变存储器结构，以减少从加热元件到周围材料的泄漏公开(公告)号：US20160064656A1
公开(公告)日：2016-03-03
申请号：US14471082
申请日：2014-08-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Po-ken Lin , Chang-Ming Wu , Chern-Yow Hsu , Shih-Chang Liu
CPC classification number: H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/1286 , H01L45/1675
Abstract: A phase change memory (PCM) cell with a heating element electrically isolated from laterally surrounding regions of the PCM cell by a cavity is provided. A dielectric region is arranged between first and second conductors. A heating plug is arranged within a hole extending through the dielectric region to the first conductor. The heating plug includes a heating element running along sidewalls of the hole, and includes a sidewall structure including a cavity arranged between the heating element and the sidewalls. A phase change element is in thermal communication with the heating plug and arranged between the heating plug and the second conductor. Also provide is a method for manufacturing the PCM cell.
Abstract translation: 提供了具有通过空腔与PCM单元的横向周围区域电隔离的加热元件的相变存储器（PCM）单元。 电介质区域布置在第一和第二导体之间。 在穿过介电区延伸到第一导体的孔内布置加热塞。 加热插头包括沿着孔的侧壁延伸的加热元件，并且包括侧壁结构，该侧壁结构包括布置在加热元件和侧壁之间的空腔。 相变元件与加热塞热连通并且布置在加热塞和第二导体之间。 还提供了用于制造PCM单元的方法。
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