公开(公告)号：US20190385855A1

公开(公告)日：2019-12-19

申请号：US16008321

申请日：2018-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Fen CHIEN ,  Chih-Hsiang FAN ,  Hsiao-Kuan WEI ,  Pohan KUNG ,  Hsien-Ming LEE

IPC: H01L21/28 ,  H01L29/49 ,  H01L21/321 ,  H01L29/66

Abstract: Methods of fabricating semiconductor devices are provided. The method includes forming a gate dielectric layer over a substrate. The method also includes depositing a first p-type work function tuning layer over the gate dielectric layer using a first atomic layer deposition (ALD) process with an inorganic precursor. The method further includes forming a second p-type work function tuning layer on the first p-type work function tuning layer using a second atomic layer deposition (ALD) process with an organic precursor. In addition, the method includes forming an n-type work function metal layer over the second p-type work function tuning layer.