公开(公告)号：US20210057298A1

公开(公告)日：2021-02-25

申请号：US16547579

申请日：2019-08-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Da Tsai ,  Ching-Hua Hsieh ,  Chih-Wei Lin ,  Tsai-Tsung Tsai ,  Sheng-Chieh Yang ,  Chia-Min Lin

IPC: H01L23/29 ,  H01L23/532 ,  H01L21/3105 ,  H01L21/56

Abstract: A semiconductor package including a semiconductor die, a molding compound and a redistribution structure is provided. The molding compound laterally wraps around the semiconductor die, wherein the molding compound includes a base material and a first filler particle and a second filler particle embedded in the base material.
The first filler particle has a first recess located in a top surface of the first filler particle, and the second filler particle has at least one hollow void therein. The redistribution structure is disposed on the semiconductor die and the molding compound, wherein the redistribution structure has a polymer dielectric layer. The polymer dielectric layer includes a body portion and a first protruding portion protruding from the body portion, wherein the body portion is in contact with the base material and the top surface of the first filler particle, and the first protruding portion fits with the first recess of the first filler particle.

公开(公告)号：US20210057259A1

公开(公告)日：2021-02-25

申请号：US16547605

申请日：2019-08-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chieh Yang ,  Shing-Chao Chen ,  Ching-Hua Hsieh ,  Chih-Wei Lin

IPC: H01L21/683 ,  H01L21/82 ,  H01L21/56 ,  H01L23/00

Abstract: A manufacturing method of a semiconductor device includes the following steps. A semiconductor wafer having an active side and a back side opposite to the active side is provided. A plurality of conductive bumps are provided on the active side. A protection film is laminated on the active side, wherein the protection film includes a dielectric film covering the plurality of conductive bumps and a cover film covering the dielectric film. A thinning process is performed on the back side to form a thinned semiconductor wafer. The cover film is removed from the dielectric film. A singularization process is performed on the thinned semiconductor wafer with the dielectric film to form a plurality of semiconductor devices.

公开(公告)号：US20210066269A1

公开(公告)日：2021-03-04

申请号：US16866561

申请日：2020-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chieh Yang ,  Ching-Hua Hsieh ,  Chih-Wei Lin ,  Yu-Hao Chen

IPC: H01L25/16 ,  H01L23/498

Abstract: Semiconductor packages are provided. The semiconductor package includes a first redistribution layer structure, a photonic integrated circuit, an electronic integrated circuit, a waveguide and a memory. The photonic integrated circuit is disposed over and electrically connected to the first redistribution layer structure, and includes an optical transceiver and an optical coupler. The electronic integrated circuit is disposed over and electrically connected to the first redistribution layer structure. The waveguide is optically coupled to the optical coupler. The memory is electrically connected to the electronic integrated circuit.

公开(公告)号：US11233039B2

公开(公告)日：2022-01-25

申请号：US16866561

申请日：2020-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chieh Yang ,  Ching-Hua Hsieh ,  Chih-Wei Lin ,  Yu-Hao Chen

IPC: H01L25/16 ,  H01L23/498

Abstract: Semiconductor packages are provided. The semiconductor package includes a first redistribution layer structure, a photonic integrated circuit, an electronic integrated circuit, a waveguide and a memory. The photonic integrated circuit is disposed over and electrically connected to the first redistribution layer structure, and includes an optical transceiver and an optical coupler. The electronic integrated circuit is disposed over and electrically connected to the first redistribution layer structure. The waveguide is optically coupled to the optical coupler. The memory is electrically connected to the electronic integrated circuit.

公开(公告)号：US11075131B2

公开(公告)日：2021-07-27

申请号：US16547579

申请日：2019-08-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Da Tsai ,  Ching-Hua Hsieh ,  Chih-Wei Lin ,  Tsai-Tsung Tsai ,  Sheng-Chieh Yang ,  Chia-Min Lin

IPC: H01L23/29 ,  H01L21/56 ,  H01L21/3105 ,  H01L23/532

Abstract: A semiconductor package including a semiconductor die, a molding compound and a redistribution structure is provided. The molding compound laterally wraps around the semiconductor die, wherein the molding compound includes a base material and a first filler particle and a second filler particle embedded in the base material. The first filler particle has a first recess located in a top surface of the first filler particle, and the second filler particle has at least one hollow void therein. The redistribution structure is disposed on the semiconductor die and the molding compound, wherein the redistribution structure has a polymer dielectric layer. The polymer dielectric layer includes a body portion and a first protruding portion protruding from the body portion, wherein the body portion is in contact with the base material and the top surface of the first filler particle, and the first protruding portion fits with the first recess of the first filler particle.

公开(公告)号：US11177156B2

公开(公告)日：2021-11-16

申请号：US16547605

申请日：2019-08-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-Chieh Yang ,  Shing-Chao Chen ,  Ching-Hua Hsieh ,  Chih-Wei Lin

IPC: H01L21/683 ,  H01L21/82 ,  H01L21/56 ,  H01L23/00

Abstract: A manufacturing method of a semiconductor device includes the following steps. A semiconductor wafer having an active side and a back side opposite to the active side is provided. A plurality of conductive bumps are provided on the active side. A protection film is laminated on the active side, wherein the protection film includes a dielectric film covering the plurality of conductive bumps and a cover film covering the dielectric film. A thinning process is performed on the back side to form a thinned semiconductor wafer. The cover film is removed from the dielectric film. A singularization process is performed on the thinned semiconductor wafer with the dielectric film to form a plurality of semiconductor devices.

公开(公告)号：US11088124B2

公开(公告)日：2021-08-10

申请号：US16103925

申请日：2018-08-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shing-Chao Chen ,  Ching-Hua Hsieh ,  Chih-Wei Lin ,  Sheng-Chieh Yang

IPC: H01L23/31 ,  H01L25/16 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

Abstract: A package includes a first redistribution structure, a bridge structure, an adhesive layer, a plurality of conductive pillars, an encapsulant, a first die, and a second die. The bridge structure is disposed on the first redistribution structure. The adhesive layer is disposed between the bridge structure and the first redistribution structure. The conductive pillars surround the bridge structure. A height of the conductive pillars is substantially equal to a sum of a height of the adhesive layer and a height of the bridge structure. The encapsulant encapsulates the bridge structure, the adhesive layer, and the conductive pillars. The first die and the second die are disposed over the bridge structure. The first die is electrically connected to the second die through the bridge structure. The first die and the second die are electrically connected to the first redistribution structure through the conductive pillars.

公开(公告)号：US20200058627A1

公开(公告)日：2020-02-20

申请号：US16103925

申请日：2018-08-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shing-Chao Chen ,  Ching-Hua Hsieh ,  Chih-Wei Lin ,  Sheng-Chieh Yang

IPC: H01L25/16 ,  H01L23/498 ,  H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56

Abstract: A package includes a first redistribution structure, a bridge structure, an adhesive layer, a plurality of conductive pillars, an encapsulant, a first die, and a second die. The bridge structure is disposed on the first redistribution structure. The adhesive layer is disposed between the bridge structure and the first redistribution structure. The conductive pillars surround the bridge structure. A height of the conductive pillars is substantially equal to a sum of a height of the adhesive layer and a height of the bridge structure. The encapsulant encapsulates the bridge structure, the adhesive layer, and the conductive pillars. The first die and the second die are disposed over the bridge structure. The first die is electrically connected to the second die through the bridge structure. The first die and the second die are electrically connected to the first redistribution structure through the conductive pillars.