Semiconductor package and method of forming the same

    公开(公告)号:US11075131B2

    公开(公告)日:2021-07-27

    申请号:US16547579

    申请日:2019-08-22

    Abstract: A semiconductor package including a semiconductor die, a molding compound and a redistribution structure is provided. The molding compound laterally wraps around the semiconductor die, wherein the molding compound includes a base material and a first filler particle and a second filler particle embedded in the base material. The first filler particle has a first recess located in a top surface of the first filler particle, and the second filler particle has at least one hollow void therein. The redistribution structure is disposed on the semiconductor die and the molding compound, wherein the redistribution structure has a polymer dielectric layer. The polymer dielectric layer includes a body portion and a first protruding portion protruding from the body portion, wherein the body portion is in contact with the base material and the top surface of the first filler particle, and the first protruding portion fits with the first recess of the first filler particle.

    Package structure and method for forming the same

    公开(公告)号:US10014260B2

    公开(公告)日:2018-07-03

    申请号:US15347912

    申请日:2016-11-10

    Abstract: Package structures and methods for forming the same are provided. A method for forming a package structure includes providing a carrier substrate. The method also includes forming a conductive layer over the carrier substrate. The method further includes forming a passivation layer over the conductive layer. The passivation layer includes openings that expose portions of the conductive layer. In addition, the method includes bonding integrated circuit dies to the portions of the conductive layer through bumps. There is a space between the integrated circuit dies and the passivation layer. The method also includes filling the space with a first molding compound. The first molding compound surrounds the bumps and the integrated circuit dies. The method further includes forming a second molding compound capping the first molding compound and the integrated circuit dies. The passivation layer has a sidewall that is covered by the second molding compound.

    SEMICONDUCTOR PACKAGE AND METHOD OF FORMING THE SAME

    公开(公告)号:US20210057298A1

    公开(公告)日:2021-02-25

    申请号:US16547579

    申请日:2019-08-22

    Abstract: A semiconductor package including a semiconductor die, a molding compound and a redistribution structure is provided. The molding compound laterally wraps around the semiconductor die, wherein the molding compound includes a base material and a first filler particle and a second filler particle embedded in the base material.
    The first filler particle has a first recess located in a top surface of the first filler particle, and the second filler particle has at least one hollow void therein. The redistribution structure is disposed on the semiconductor die and the molding compound, wherein the redistribution structure has a polymer dielectric layer. The polymer dielectric layer includes a body portion and a first protruding portion protruding from the body portion, wherein the body portion is in contact with the base material and the top surface of the first filler particle, and the first protruding portion fits with the first recess of the first filler particle.

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