公开(公告)号：US11532459B2

公开(公告)日：2022-12-20

申请号：US16021448

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hung Yeh ,  Tsung-Lin Lee ,  Yi-Ming Lin ,  Sheng-Chun Yang ,  Tung-Ching Tseng

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455

Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.

公开(公告)号：US12249493B2

公开(公告)日：2025-03-11

申请号：US18172563

申请日：2023-02-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Chun Yang ,  Yi-Ming Lin ,  Po-Wei Liang ,  Chu-Han Hsieh ,  Chih-Lung Cheng ,  Po-Chih Huang

IPC: H01L21/67 ,  C23C16/455 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683

Abstract: A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.

公开(公告)号：US11594401B2

公开(公告)日：2023-02-28

申请号：US16800220

申请日：2020-02-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Chun Yang ,  Yi-Ming Lin ,  Po-Wei Liang ,  Chu-Han Hsieh ,  Chih-Lung Cheng ,  Po-Chih Huang

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/46 ,  C23C16/505

Abstract: A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.