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公开(公告)号：US20200037427A1
公开(公告)日：2020-01-30
申请号：US16250026
申请日：2019-01-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi YANG , Sheng-Ta LIN , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: An extreme ultraviolet radiation source is provided, including a vessel, an optical collector, and a gas scrubber. The vessel has a gas inlet and a gas outlet. The optical collector is disposed within the vessel and configured to collect and reflect extreme ultraviolet light produced in the vessel. A cleaning gas is introduced into the vessel through the gas inlet to clean the surface of the optical collector. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the size of the gas passage close to the gas outlet is smaller than the size of the gas passage away from the gas outlet.
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公开(公告)号：US20200314989A1
公开(公告)日：2020-10-01
申请号：US16899825
申请日：2020-06-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi YANG , Sheng-Ta LIN , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: An extreme ultraviolet radiation source is provided, including a vessel and a gas scrubber. The vessel has a gas inlet from which a cleaning gas is supplied into the vessel and a gas outlet from which the cleaning gas exits the vessel. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the sizes of the gas passages vary according to the distance between each of the gas passages and the gas outlet.
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公开(公告)号：US20200057389A1
公开(公告)日：2020-02-20
申请号：US16442057
申请日：2019-06-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Sheng-Ta LIN , Po-Chung CHENG , Li-Jui CHEN , Shang-Chieh CHIEN
IPC: G03F7/20
Abstract: A droplet catcher includes a tube main body and baffles arranged along a length direction of the tube main body.
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公开(公告)号：US20200057181A1
公开(公告)日：2020-02-20
申请号：US16538727
申请日：2019-08-12
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Chi YANG , Sheng-Ta LIN , Jen-Yang CHUNG , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.
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