公开(公告)号：US12224327B2

公开(公告)日：2025-02-11

申请号：US18366369

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Shih-Hsiang Chiu ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/417 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: Methods for improving sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant; a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature; a second contact material over the first contact material, the second contact material including a material different from the first contact material, a first portion of the second contact material further including the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, a first portion of the dielectric liner including the first dopant.

公开(公告)号：US11862694B2

公开(公告)日：2024-01-02

申请号：US17223293

申请日：2021-04-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Shih-Hsiang Chiu ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/45 ,  H01L29/78 ,  H01L21/311 ,  H01L29/66 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/40 ,  H01L21/3115

CPC classification number: H01L29/41791 ,  H01L21/28568 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/401 ,  H01L29/45 ,  H01L29/66795 ,  H01L29/7851

Abstract: Methods for improving sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant; a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature; a second contact material over the first contact material, the second contact material including a material different from the first contact material, a first portion of the second contact material further including the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, a first portion of the dielectric liner including the first dopant.

公开(公告)号：US20230411474A1

公开(公告)日：2023-12-21

申请号：US18366369

申请日：2023-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Shih-Hsiang Chiu ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/45 ,  H01L29/78 ,  H01L21/311 ,  H01L29/66 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/40 ,  H01L21/3115

CPC classification number: H01L29/41791 ,  H01L27/0924 ,  H01L29/45 ,  H01L29/7851 ,  H01L21/31111 ,  H01L21/31155 ,  H01L21/28568 ,  H01L21/823821 ,  H01L21/823871 ,  H01L29/401 ,  H01L29/66795

Abstract: Methods for improving sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant; a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature; a second contact material over the first contact material, the second contact material including a material different from the first contact material, a first portion of the second contact material further including the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, a first portion of the dielectric liner including the first dopant.

公开(公告)号：US12278141B2

公开(公告)日：2025-04-15

申请号：US17675462

申请日：2022-02-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Shih-Hsiang Chiu ,  Meng-Han Chou ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/76 ,  H01L21/31 ,  H01L21/3115 ,  H01L21/768

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices are described herein. A method includes implanting neutral elements into a dielectric layer, an etch stop layer, and a metal feature, the dielectric layer being disposed over the etch stop layer and the metal feature being disposed through the dielectric layer and the etch stop layer. The method further includes using a germanium gas as a source for the neutral elements and using a beam current above 6.75 mA to implant the neutral elements.

公开(公告)号：US20240387661A1

公开(公告)日：2024-11-21

申请号：US18786082

申请日：2024-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Shih-Hsiang Chiu ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/417 ,  H01L21/285 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/40 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

Abstract: Methods for improving sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant; a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature; a second contact material over the first contact material, the second contact material including a material different from the first contact material, a first portion of the second contact material further including the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, a first portion of the dielectric liner including the first dopant.

公开(公告)号：US20220406655A1

公开(公告)日：2022-12-22

申请号：US17675462

申请日：2022-02-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Shih-Hsiang Chiu ,  Meng-Han Chou ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L21/768 ,  H01L21/3115

Abstract: Semiconductor devices and methods of manufacturing semiconductor devices are described herein. A method includes implanting neutral elements into a dielectric layer, an etch stop layer, and a metal feature, the dielectric layer being disposed over the etch stop layer and the metal feature being disposed through the dielectric layer and the etch stop layer. The method further includes using a germanium gas as a source for the neutral elements and using a beam current above 6.75 mA to implant the neutral elements.

公开(公告)号：US20220093758A1

公开(公告)日：2022-03-24

申请号：US17223293

申请日：2021-04-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuo-Ju Chen ,  Shih-Hsiang Chiu ,  Su-Hao Liu ,  Liang-Yin Chen ,  Huicheng Chang ,  Yee-Chia Yeo

IPC: H01L29/417 ,  H01L27/092 ,  H01L29/45 ,  H01L29/78 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/40 ,  H01L29/66

Abstract: Methods for improving sealing between contact plugs and adjacent dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first dielectric layer over a conductive feature, a first portion of the first dielectric layer including a first dopant; a metal feature electrically coupled to the conductive feature, the metal feature including a first contact material in contact with the conductive feature; a second contact material over the first contact material, the second contact material including a material different from the first contact material, a first portion of the second contact material further including the first dopant; and a dielectric liner between the first dielectric layer and the metal feature, a first portion of the dielectric liner including the first dopant.