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公开(公告)号：US20210247702A1
公开(公告)日：2021-08-12
申请号：US16787947
申请日：2020-02-11
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu CHEN , Shang-Chieh CHIEN , Li-Jui CHEN
Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a volume to collect liquid tin debris remaining after a plasma generation process, a cover coupled to the volume, wherein the cover comprises at least one opening to allow the liquid tin debris to fall through the at least one opening of the cover and into the volume, and a heater coupled to the cover, wherein the heater is to melt solid tin that forms from cooling of the liquid tin debris on a surface around the at least one opening of the cover.
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公开(公告)号：US20200314990A1
公开(公告)日：2020-10-01
申请号：US16365905
申请日：2019-03-27
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu CHEN , Chi YANG , Che-Chang HSU , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.
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3.发明申请公开(公告)号：US20190094718A1
公开(公告)日：2019-03-28
申请号：US16021461
申请日：2018-06-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
IPC: G03F7/20
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.
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公开(公告)号：US20210389678A1
公开(公告)日：2021-12-16
申请号：US16900735
申请日：2020-06-12
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu CHEN , Hsin-Feng CHEN , Chi YANG , Li-Jui CHEN
IPC: G03F7/20
Abstract: A system for controlling plasma position in extreme ultraviolet lithography light sources may include a vacuum chamber, a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed from a metal material, a laser light source to fire a plurality of laser pulses, including at least a first pulse and a second pulse, into the vacuum chamber, a sensor to detect an observed plasma position within the chamber, wherein the observed plasma position comprises a position at which the plurality of laser pulses vaporizes a droplet of the stream of droplets to produce a plasma that emits extreme ultraviolet radiation, and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma position and a target plasma position.
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5.发明申请公开(公告)号：US20200348607A1
公开(公告)日：2020-11-05
申请号：US16927142
申请日：2020-07-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20200073261A1
公开(公告)日：2020-03-05
申请号：US16675921
申请日：2019-11-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.
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公开(公告)号：US20190094717A1
公开(公告)日：2019-03-28
申请号：US16057208
申请日：2018-08-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.
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公开(公告)号：US20230273526A1
公开(公告)日：2023-08-31
申请号：US18304778
申请日：2023-04-21
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu CHEN , Hsin-Feng CHEN , Chi YANG , Li-Jui CHEN
IPC: G03F7/20
CPC classification number: G03F7/70033
Abstract: A method includes dispensing a droplet into a vacuum chamber; firing a pre-pulse laser to the droplet; sensing a first image of a return beam of the pre-pulse laser from the droplet; after firing the pre-pulse laser, firing a main-pulse laser to the droplet, wherein when the main-pulse laser hits the droplet, the droplet is vaporized into a plasma that emits extreme ultraviolet radiation; after sensing the first image and firing the main-pulse laser, sensing a second image of a return beam of the main-pulse laser from the droplet; and adjusting a plasma position in the vacuum chamber according to at least the second image.
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公开(公告)号：US20220260927A1
公开(公告)日：2022-08-18
申请号：US17734774
申请日：2022-05-02
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu CHEN , Shang-Chieh CHIEN , Li-Jui CHEN
Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.
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10.发明申请公开(公告)号：US20220225490A1
公开(公告)日：2022-07-14
申请号：US17712373
申请日：2022-04-04
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ssu-Yu CHEN , Shang-Chieh CHIEN , Li-Jui CHEN
Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a droplet generator, a droplet catcher, a laser source, a plurality of vanes, and a bucket. The droplet generator is to generate tin droplets. The droplet catcher is opposite to the droplet generator to catch the tin droplets. The laser source is to generate a laser beam striking the tin droplets to form a plasma. The plurality of vanes are arranged around an axis to collect tin debris created from the plasma. The bucket is connected to the vanes and includes a cover, a vane bucket, and a heater. The cover has an opening. The vane bucket is surrounded by the cover. The heater is on a sidewall of the cover and spaced apart from the droplet catcher.
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