公开(公告)号：US09553191B1

公开(公告)日：2017-01-24

申请号：US14942980

申请日：2015-11-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chin-I Liao ,  Mon-Nan How ,  Shih-Chieh Chang ,  Ying-Min Chou ,  Ting-Chang Chang

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L21/306 ,  H01L21/762 ,  H01L21/283 ,  H01L21/02 ,  H01L29/06 ,  H01L27/12 ,  H01L21/84

CPC分类号： H01L29/7848 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02636 ,  H01L21/283 ,  H01L21/30604 ,  H01L21/76224 ,  H01L29/66795 ,  H01L29/785

摘要： A method of fabricating a FinFET includes at last the following steps. A semiconductor substrate is patterned to form a plurality of trenches in the semiconductor substrate and at least one semiconductor fin between the trenches. Insulators are formed in the trenches. A gate stack is formed over portions of the semiconductor fin and over portions of the insulators. A strained material doped with a conductive dopant is formed over portions of the semiconductor fin revealed by the gate stack, and the strained material is formed by selectively growing a bulk layer with a gradient doping concentration.

摘要翻译： 制造FinFET的方法最后包括以下步骤。 图案化半导体衬底以在半导体衬底中形成多个沟槽，并在沟槽之间形成至少一个半导体鳍片。 绝缘子形成在沟槽中。 栅极叠层形成在半导体鳍片的部分和绝缘体的上部。 掺杂有导电掺杂剂的应变材料形成在半导体鳍片的由栅极叠层显露的部分上，并且应变材料通过选择性地生长具有梯度掺杂浓度的体层而形成。

公开(公告)号：US20240178328A1

公开(公告)日：2024-05-30

申请号：US18310369

申请日：2023-05-01

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Cheng-Hsien Wu ,  Chien-Lin Tseng ,  Sheng Yu Lin ,  Ting-Chang Chang ,  Yung-Fang Tan ,  Yu-Fa Tu ,  Wei-Chun Hung

IPC分类号： H01L29/872 ,  H01L21/762 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L21/762 ,  H01L29/47

摘要： Embodiments include a Schottky barrier diode (SBD) structure and method of forming the same, the SBD structure including a current blockage feature to inhibit current from leaking at an interface with a shallow trench isolation regions surrounding an anode region of the SBD structure.