公开(公告)号：US20190067129A1

公开(公告)日：2019-02-28

申请号：US15690340

申请日：2017-08-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tong-Min WENG ,  Tsung-Han WU

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/02 ,  H01L21/3115 ,  H01L29/66 ,  H01L27/092 ,  H01L29/49

Abstract: A method for forming a semiconductor device includes steps of: forming at least one gate structure comprising a gate electrode over a substrate, and forming a first dielectric layer of a first dielectric material along a side wall of the at least one gate structure. The first dielectric layer of the first dielectric material includes fluorine doped silicon oxycarbonitride with a doping concentration of fluorine. The dielectric constant of the first dielectric layer is adjusted through the doping concentration of fluorine.

公开(公告)号：US20200035815A1

公开(公告)日：2020-01-30

申请号：US16048904

申请日：2018-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsung-Han WU ,  Tong-Min WENG ,  Chun-Yi HUANG ,  Po-Ching LEE ,  Chih-Hsuan HSIEH ,  Shu-Ching TSAI

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/265 ,  H01L21/324 ,  H01L21/02

Abstract: Methods of fabricating FinFET devices are provided. The method includes forming a fin over a substrate. The method also includes implanting a first dopant on a top surface of the fin and implanting a second dopant on a sidewall surface of the fin. The first dopant is different from the second dopant. The method further includes forming an oxide layer on the top surface and the sidewall surface of the fin, and forming a gate electrode layer over the oxide layer.

公开(公告)号：US20230207395A1

公开(公告)日：2023-06-29

申请号：US18113516

申请日：2023-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tong-Min WENG ,  Tsung-Han Wu

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/02 ,  H01L29/49 ,  H01L21/3115 ,  H01L29/66 ,  H01L27/092 ,  H01L29/78

CPC classification number: H01L21/823864 ,  H01L21/28123 ,  H01L21/02131 ,  H01L21/0217 ,  H01L29/4983 ,  H01L21/31155 ,  H01L21/823821 ,  H01L29/66545 ,  H01L27/0924 ,  H01L21/022 ,  H01L21/02126 ,  H01L21/02321 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/6656

Abstract: A semiconductor device includes: at least one gate structure comprising a gate electrode over a substrate, the gate electrode comprising a conductive material; and a first dielectric layer disposed along one or more side wall of the at least one gate structure, the first dielectric layer comprising fluorine doped silicon oxycarbonitride or fluorine doped silicon oxycarbide.

公开(公告)号：US20200066601A1

公开(公告)日：2020-02-27

申请号：US16673794

申请日：2019-11-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tong-Min WENG ,  Tsung-Han WU

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/02 ,  H01L29/49 ,  H01L21/3115 ,  H01L29/66 ,  H01L27/092 ,  H01L29/78

Abstract: A semiconductor device includes: at least one gate structure comprising a gate electrode over a substrate, the gate electrode comprising a conductive material; and a first dielectric layer disposed along one or more side wall of the at least one gate structure, the first dielectric layer comprising fluorine doped silicon oxycarbonitride or fluorine doped silicon oxycarbide.