公开(公告)号：US20190136373A1

公开(公告)日：2019-05-09

申请号：US16021448

申请日：2018-06-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Hung YEH ,  Tsung-Lin LEE ,  Yi-Ming LIN ,  Sheng-Chun YANG ,  Tung-Ching TSENG

IPC: C23C16/44 ,  C23C16/52 ,  H01J37/32 ,  C23C16/455

Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.

公开(公告)号：US20170194162A1

公开(公告)日：2017-07-06

申请号：US14988674

申请日：2016-01-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsin-Chih LIU ,  Chia-Hung HUANG ,  Jen-Chung CHEN ,  Tung-Ching TSENG

IPC: H01L21/324 ,  H01L21/67

CPC classification number: H01L21/324 ,  H01L21/67115

Abstract: A semiconductor manufacturing equipment includes a processing chamber, at least one reflector and at least one electromagnetic wave emitting device. The reflector is present in the processing chamber. The electromagnetic wave emitting device is present between the reflector and a wafer in the processing chamber. The electromagnetic wave emitting device is configured to emit a spectrum of electromagnetic wave to the wafer. The reflector has a relative reflectance to Al2O3 with respect to the spectrum of electromagnetic wave, and the relative reflectance of the reflector is in a range from about 70% to about 120%.