公开(公告)号：US20230369516A1

公开(公告)日：2023-11-16

申请号：US18354536

申请日：2023-07-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han LIN ,  Chao-Ching CHANG ,  Yi-Ming LIN ,  Yen-Ting CHOU ,  Yen-Chang CHEN ,  Sheng-Chan LI ,  Cheng-Hsien CHOU

IPC: H01L31/0216 ,  H01L31/18 ,  H01L27/146 ,  H01L31/0232

CPC classification number: H01L31/0216 ,  H01L31/18 ,  H01L27/14636 ,  H01L31/0232

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating. wherein the composite etch stop mask layer includes a silicon nitride layer and a stressed layer. A percentage of Si—H bonds in the silicon nitride layer is greater than a percentage of Si—H bonds in the stressed layer.

公开(公告)号：US20230260764A1

公开(公告)日：2023-08-17

申请号：US18140986

申请日：2023-04-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-chun YANG ,  Po-Wei LIANG ,  Chao-Hung WAN ,  Yi-Ming LIN ,  Liu Che KANG

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32082 ,  H01J2237/0266

Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.

公开(公告)号：US20230067115A1

公开(公告)日：2023-03-02

申请号：US17459821

申请日：2021-08-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-chun YANG ,  Po-Chih HUANG ,  Chih-Lung CHENG ,  Yi-Ming LIN ,  Chen-Hao LIAO ,  Min-Cheng CHUNG

IPC: H01L21/324 ,  H01L21/67

Abstract: A system and method for generating a gas curtain over an access port of a processing chamber for a semiconductor substrate. A gas flow stabilizer and a gas flow receiver, each including a horizontal flow section and a vertical flow section cooperate to generate a gas curtain that impedes gas, e.g., oxygen, from outside the processing chamber, from flowing into the chamber, for example, when the access port is opened to add/or to remove a workpiece from the processing chamber.

公开(公告)号：US20220020573A1

公开(公告)日：2022-01-20

申请号：US16929881

申请日：2020-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-chun YANG ,  Po-Wei LIANG ,  Chao-Hung WAN ,  Yi-Ming LIN ,  Liu Che KANG

IPC: H01J37/32

Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.

公开(公告)号：US20190035829A1

公开(公告)日：2019-01-31

申请号：US16055308

申请日：2018-08-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Ching CHANG ,  Sheng-Chan LI ,  Cheng-Hsien CHOU ,  Tsung-Wei HUANG ,  Min-Hui LIN ,  Yi-Ming LIN

IPC: H01L27/146 ,  H01L21/02 ,  H01L21/3105

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a first surface, a second surface, and a light-sensing region. The image sensor device includes a first isolation structure in the substrate and adjacent to the first surface. The first isolation structure surrounds the light-sensing region. The image sensor device includes a second isolation structure passing through the first isolation structure and the substrate under the first isolation structure. The second isolation structure surrounds the light-sensing region and a portion of the first isolation structure.

公开(公告)号：US20180366369A1

公开(公告)日：2018-12-20

申请号：US15623481

申请日：2017-06-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han LIN ,  Han-Sheng WENG ,  Chao-Ching CHANG ,  Jian-Shin TSAI ,  Yi-Ming LIN ,  Min-Hui LIN

IPC: H01L21/768 ,  H01L23/535 ,  H01L23/48 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76834 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53214 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53242 ,  H01L23/53257 ,  H01L23/53261 ,  H01L23/53295 ,  H01L23/535

Abstract: A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).

公开(公告)号：US20230197421A1

公开(公告)日：2023-06-22

申请号：US18172563

申请日：2023-02-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Chun YANG ,  Yi-Ming LIN ,  Po-Wei LIANG ,  Chu-Han HSIEH ,  Chih-Lung CHENG ,  Po-Chih HUANG

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/46 ,  C23C16/505 ,  C23C16/455 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01L21/67109 ,  C23C16/466 ,  C23C16/505 ,  C23C16/45565 ,  C23C16/45576 ,  H01L21/6838 ,  H01J2237/002 ,  H01L21/67028 ,  H01J2237/334 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/67069

Abstract: A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.

公开(公告)号：US20220278242A1

公开(公告)日：2022-09-01

申请号：US17744398

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Cheng-Han LIN ,  Chao-Ching CHANG ,  Yi-Ming LIN ,  Yen-Ting CHOU ,  Yen-Chang CHEN ,  Sheng-Chan LI ,  Cheng-Hsien CHOU

IPC: H01L31/0216 ,  H01L31/18 ,  H01L27/146 ,  H01L31/0232

Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.

公开(公告)号：US20210265142A1

公开(公告)日：2021-08-26

申请号：US16800220

申请日：2020-02-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Chun YANG ,  Yi-Ming LIN ,  Po-Wei LIANG ,  Chu-Han HSIEH ,  Chih-Lung CHENG ,  Po-Chih HUANG

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/46 ,  C23C16/505

Abstract: A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.

公开(公告)号：US20240304426A1

公开(公告)日：2024-09-12

申请号：US18667944

申请日：2024-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Sheng-chun YANG ,  Po-Wei LIANG ,  Chao-Hung WAN ,  Yi-Ming LIN ,  Liu Che KANG

IPC: H01J37/32

CPC classification number: H01J37/32651 ,  H01J37/32082 ,  H01J2237/0266

Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.