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公开(公告)号:US20240079483A1
公开(公告)日:2024-03-07
申请号:US18124980
申请日:2023-03-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yi-Hung LIN , I-Hsieh WONG , Tzu-Hua CHIU , Cheng-Yi PENG , Chia-Pin LIN
IPC: H01L29/775 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/66
CPC classification number: H01L29/775 , H01L29/0653 , H01L29/0673 , H01L29/41775 , H01L29/42392 , H01L29/66439
Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a fin base disposed on the substrate, nanostructured channel regions disposed on a first portion of the fin base, a gate structure surrounding the nanostructured channel regions, a source/drain (S/D) region disposed on a second portion of the fin base, and an isolation structure disposed between the S/D region and the second portion of the fin base. The isolation structure includes an undoped semiconductor layer disposed on the second portion of the fin base, a silicon-rich dielectric layer disposed on the undoped semiconductor layer, and an air spacer disposed on the silicon-rich dielectric layer.