公开(公告)号：US20240079483A1

公开(公告)日：2024-03-07

申请号：US18124980

申请日：2023-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hung LIN ,  I-Hsieh WONG ,  Tzu-Hua CHIU ,  Cheng-Yi PENG ,  Chia-Pin LIN

IPC: H01L29/775 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/66439

Abstract: A semiconductor device and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a substrate, a fin base disposed on the substrate, nanostructured channel regions disposed on a first portion of the fin base, a gate structure surrounding the nanostructured channel regions, a source/drain (S/D) region disposed on a second portion of the fin base, and an isolation structure disposed between the S/D region and the second portion of the fin base. The isolation structure includes an undoped semiconductor layer disposed on the second portion of the fin base, a silicon-rich dielectric layer disposed on the undoped semiconductor layer, and an air spacer disposed on the silicon-rich dielectric layer.