公开(公告)号：US09812426B1

公开(公告)日：2017-11-07

申请号：US15257920

申请日：2016-09-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Te Wang ,  Cheng-Hsien Hsieh ,  Hsien-Wei Chen ,  Li-Han Hsu ,  Tzu-Shiun Sheu ,  Wei-Cheng Wu ,  Yan-Fu Lin

IPC: H01L25/065 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L25/0657 ,  H01L24/02 ,  H01L24/13 ,  H01L25/16 ,  H01L25/50 ,  H01L2224/02166 ,  H01L2224/02206 ,  H01L2224/0221 ,  H01L2224/113 ,  H01L2224/13018 ,  H01L2224/13024 ,  H01L2224/13027 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06586

Abstract: A semiconductor device including an integrated circuit, a protection layer, and a conductive via is provided. The integrated circuit includes at least one conductive pad. The protection layer covers the integrated circuit. The protection layer includes a contact opening, and the conductive pad is exposed by the contact opening of the protection layer. The conductive via is embedded in the contact opening of the protection layer, and the conductive via is electrically connected to the conductive pad through the contact opening. A method of fabricating the above-mentioned semiconductor device and an integrated fan-out package including the above-mentioned semiconductor device are also provided.