公开(公告)号：US20230163075A1

公开(公告)日：2023-05-25

申请号：US17743849

申请日：2022-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Hsien Lin ,  Ting-Gang Chen ,  Chin-Wei Lin ,  Chi On Chui

IPC: H01L23/535 ,  H01L29/78 ,  H01L23/532 ,  H01L21/768 ,  H01L29/66

CPC classification number: H01L23/535 ,  H01L29/7851 ,  H01L23/53242 ,  H01L23/53257 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76895 ,  H01L29/66795

Abstract: Methods for selectively depositing a metal layer over a gate structure and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a channel region over a semiconductor substrate; a gate structure over the channel region; a gate spacer adjacent the gate structure; a first dielectric layer adjacent the gate spacer; a barrier layer contacting a top surface of the gate spacer and a side surface of the first dielectric layer, the barrier layer including a nitride; and a metal layer over the gate structure adjacent the barrier layer, the metal layer having a first width equal to a second width of the gate structure.

公开(公告)号：US20220359206A1

公开(公告)日：2022-11-10

申请号：US17872623

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Gang Chen ,  Wan-Hsien Lin ,  Chieh-Ping Wang ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L21/28 ,  H01L21/764 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66

Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.

公开(公告)号：US12283485B2

公开(公告)日：2025-04-22

申请号：US17872623

申请日：2022-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Gang Chen ,  Wan-Hsien Lin ,  Chieh-Ping Wang ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L27/088 ,  H01L21/28 ,  H01L21/764 ,  H01L21/8238 ,  H01L23/535 ,  H01L27/092 ,  H01L29/06 ,  H01L29/66

Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.

公开(公告)号：US20250125150A1

公开(公告)日：2025-04-17

申请号：US19002450

申请日：2024-12-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ting-Gang Chen ,  Wan-Hsien Lin ,  Chieh-Ping Wang ,  Tai-Chun Huang ,  Chi On Chui

IPC: H01L21/28 ,  H01L21/764 ,  H01L23/535 ,  H10D62/10 ,  H10D64/01 ,  H10D84/01 ,  H10D84/03 ,  H10D84/85

Abstract: A gate stack can be etched to form a trench extending through the gate stack, the trench removing a portion of the gate stack to separate the gate stack into a first gate stack portion and a second gate stack portion. A dielectric material is deposited in the trench to form a dielectric region, the dielectric region having an air gap in the dielectric material. The air gap may extend upward from beneath the gate stack to an area interposed between the end of the first gate stack portion and the end of the second gate stack portion. Contacts to the first gate stack portion and contacts to the second gate stack portion may be formed which are electrically isolated from each other by the dielectric material and air gap formed therein.