公开(公告)号：US20230117574A1

公开(公告)日：2023-04-20

申请号：US17655208

申请日：2022-03-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Jin Li ,  Che-Hao Chang ,  Chi On Chui ,  Yung-Cheng Lu ,  Wen-Kai Lin

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor structure and a method of forming is provided. The semiconductor structure includes nanostructures separated from one another and stacked over a substrate, a gate stack wrapping around the nanostructures, and a dielectric fin structure laterally spaced apart from the nanostructures by the gate stack. The dielectric fin structure include a lining layer and a fill layer nested within the lining layer. The lining layer is made of a carbon-containing dielectric material, and a carbon concentration of the lining layer varies in a direction from the gate stack to the lining layer.

公开(公告)号：US11075123B2

公开(公告)日：2021-07-27

申请号：US16572109

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yi Kao ,  Chung-Chi Ko ,  Wei-Jin Li

IPC: H01L21/8234 ,  H01L27/088 ,  H01L21/762 ,  H01L21/3105 ,  H01L29/66

Abstract: A method for forming a semiconductor structure is provided. The method includes patterning a semiconductor substrate to form a first semiconductor fin and a second semiconductor fin, and depositing a first dielectric material on the first and second semiconductor fins. There is a trench between the first and second semiconductor fins. The method also includes depositing a semiconductor material on the first dielectric material, heating the semiconductor material to cause the semiconductor material to flow to a bottom region of the trench, filling a top region of the trench with a second dielectric material, and heating the first dielectric material, the second dielectric material, and the semiconductor material to form an isolation structure between the first and second semiconductor fins.

公开(公告)号：US10943820B2

公开(公告)日：2021-03-09

申请号：US16414273

申请日：2019-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yi Kao ,  Wei-Jin Li ,  Chung-Chi Ko ,  Yu-Cheng Shiau ,  Han-Sheng Weng ,  Chih-Tang Peng ,  Tien-I Bao

IPC: H01L21/768 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L21/02 ,  H01L21/762

Abstract: A method for forming a semiconductor structure is provided. The method includes patterning a semiconductor substrate to form a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin, and depositing a first dielectric material on the first semiconductor fin and the second semiconductor fin on the semiconductor substrate using an atomic layer deposition process. There is a first trench between the first semiconductor fin and the second semiconductor fin. The method also includes filling the first trench with a flowable dielectric material, and heating the flowable dielectric material and the first dielectric material to form an isolation structure between the first semiconductor fin and the second semiconductor fin.