公开(公告)号：US20200212244A1

公开(公告)日：2020-07-02

申请号：US16818934

申请日：2020-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Yu-Ting KAO ,  Yen-Liang LIN ,  Wen-I HSU ,  Hsun-Ying HUANG ,  Kuo-Cheng LEE ,  Hsin-Chi CHEN

IPC: H01L31/107 ,  H01L31/0216 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224

Abstract: A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.

公开(公告)号：US20150145096A1

公开(公告)日：2015-05-28

申请号：US14089263

申请日：2013-11-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Wen-I HSU ,  Feng-Chi HUNG ,  Chun-Chieh CHUANG ,  Dun-Nian YAUNG ,  Jen-Cheng LIU

IPC: H01L27/146

CPC classification number: H01L27/1464 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

Abstract: Embodiments of mechanisms for forming an image-sensor device are provided. The image-sensor device includes a substrate having a front surface and a back surface. The image-sensor device also includes a radiation-sensing region formed in the substrate. The radiation-sensing region is operable to detect incident radiation that enters the substrate through the back surface. The radiation-sensing region further includes an epitaxial isolation feature formed in the substrate and adjacent to the radiation-sensing region. The radiation-sensing region and the epitaxial isolation feature have different doping polarities.

Abstract translation: 提供了用于形成图像传感器装置的机构的实施例。 图像传感器装置包括具有前表面和后表面的基板。 图像传感器装置还包括形成在基板中的辐射感测区域。 辐射感测区域可操作以检测通过后表面进入衬底的入射辐射。 辐射感测区域还包括形成在衬底中并且与辐射感测区域相邻的外延隔离特征。 辐射感测区域和外延隔离特征具有不同的掺杂极性。