公开(公告)号：US20200212244A1

公开(公告)日：2020-07-02

申请号：US16818934

申请日：2020-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Yu-Ting KAO ,  Yen-Liang LIN ,  Wen-I HSU ,  Hsun-Ying HUANG ,  Kuo-Cheng LEE ,  Hsin-Chi CHEN

IPC: H01L31/107 ,  H01L31/0216 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224

Abstract: A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.