公开(公告)号：US20190319098A1

公开(公告)日：2019-10-17

申请号：US15952495

申请日：2018-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Roger TAI ,  Chii-Horng LI ,  Pei-Ren JENG ,  Yen-Ru LEE ,  Yan-Ting LIN ,  Chih-Yun CHIN

IPC: H01L29/08 ,  H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  H01L29/78 ,  H01L29/165

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.