公开(公告)号：US20170317192A1

公开(公告)日：2017-11-02

申请号：US15651717

申请日：2017-07-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsai-Jung HO ,  Pei-Ren JENG

IPC: H01L29/66 ,  H01L21/283 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01L29/66795 ,  H01L21/283 ,  H01L21/3065 ,  H01L21/76895 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A method of fabricating a fin field-effect transistor (FinFET) device is provided. The method includes forming a carbon-based layer on a plurality of gate structures formed on a semiconductor substrate. Each gate structure overlies at least one fin formed on the semiconductor substrate. The carbon-based layer covers sidewalls of the gate structures. A metal silicide layer overlies the carbon-based layer. The metal silicide layer and carbon-based layer are removed, and a metal layer is formed between adjacent gate structures.

公开(公告)号：US20190319098A1

公开(公告)日：2019-10-17

申请号：US15952495

申请日：2018-04-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Roger TAI ,  Chii-Horng LI ,  Pei-Ren JENG ,  Yen-Ru LEE ,  Yan-Ting LIN ,  Chih-Yun CHIN

IPC: H01L29/08 ,  H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  H01L29/78 ,  H01L29/165

Abstract: An embodiment is a semiconductor structure. The semiconductor structure includes a fin on a substrate. A gate structure is over the fin. A source/drain is in the fin proximate the gate structure. The source/drain includes a bottom layer, a supportive layer over the bottom layer, and a top layer over the supportive layer. The supportive layer has a different property than the bottom layer and the top layer, such as a different material, a different natural lattice constant, a different dopant concentration, and/or a different alloy percent content.

公开(公告)号：US20170213901A1

公开(公告)日：2017-07-27

申请号：US15259394

申请日：2016-09-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Tsai-Jung HO ,  Pei-Ren JENG

IPC: H01L29/66 ,  H01L21/283 ,  H01L21/3065 ,  H01L21/768

CPC classification number: H01L29/66795 ,  H01L21/283 ,  H01L21/3065 ,  H01L21/76895 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/7848 ,  H01L29/785

Abstract: A method of fabricating a fin field-effect transistor (FinFET) device is provided. The method includes forming a carbon-based layer on a plurality of gate structures formed on a semiconductor substrate. Each gate structure overlies at least one fin formed on the semiconductor substrate. The carbon-based layer covers sidewalls of the gate structures. A metal silicide layer overlies the carbon-based layer. The metal silicide layer and carbon-based layer are removed, and a metal layer is formed between adjacent gate structures.