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公开(公告)号：US20190204730A1
公开(公告)日：2019-07-04
申请号：US16228339
申请日：2018-12-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yun-Yue LIN , Hsuan-Chen CHEN , Chih-Cheng LIN , Hsin-Chang LEE , Yao-Ching KU , Wei-Jen LO , Anthony YEN , Chin-Hsiang LIN , Mark CHIEN
Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
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公开(公告)号：US20180173092A1
公开(公告)日：2018-06-21
申请号：US15381033
申请日：2016-12-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yun-Yue LIN , Hsuan-Chen CHEN , Chih-Cheng LIN , Hsin-Chang LEE , Yao-Ching KU , Wei-Jen LO , Anthony YEN , Chin-Hsiang LIN , Mark CHIEN
Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
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