公开(公告)号：US20210397075A1

公开(公告)日：2021-12-23

申请号：US17108906

申请日：2020-12-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue LIN

IPC: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an intermediate layer disposed over the capping layer, an absorber layer disposed over the intermediate layer, and a cover layer disposed over the absorber layer. The absorber layer includes one or more layers of an Ir based material, a Pt based material or a Ru based material.

公开(公告)号：US20210033962A1

公开(公告)日：2021-02-04

申请号：US17074509

申请日：2020-10-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue LIN

IPC: G03F1/48 ,  G03F1/22 ,  G03F1/76 ,  G03F7/038 ,  G03F7/039 ,  G03F1/54

Abstract: A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.

公开(公告)号：US20200096858A1

公开(公告)日：2020-03-26

申请号：US16141719

申请日：2018-09-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue LIN

IPC: G03F1/48 ,  G03F1/22 ,  G03F1/54 ,  G03F7/038 ,  G03F7/039 ,  G03F1/76

Abstract: A mask for extreme ultraviolet (EUV) lithography includes a multilayer (ML) stack including alternating metal and semiconductor layers disposed over a first surface of a mask substrate, a capping layer disposed over the ML stack, and an absorber layer disposed over the capping layer. An image pattern is formed in the absorber layer. A border layer surrounding the image pattern is disposed over the absorber layer.

公开(公告)号：US20190101818A1

公开(公告)日：2019-04-04

申请号：US15965146

申请日：2018-04-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue LIN

IPC: G03F1/32 ,  G03F1/80 ,  G03F7/20

Abstract: A method of manufacturing a phase shift mask includes forming a doped silicon nitride layer on a mask substrate and forming an opaque layer on the doped silicon nitride layer. The opaque layer and doped silicon nitride layer are then patterned to expose portions of the mask substrate to form a plurality of mask features comprising the opaque layer disposed on the doped silicon nitride layer. Portions of the opaque layer are then removed from some of the mask features.

公开(公告)号：US20180292744A1

公开(公告)日：2018-10-11

申请号：US16010118

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Yun-Yue LIN ,  Hsuan-Chen CHEN ,  Hsuan-I WANG ,  Anthony YEN

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/2004

Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.

公开(公告)号：US20220252986A1

公开(公告)日：2022-08-11

申请号：US17728945

申请日：2022-04-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue LIN

IPC: G03F7/20 ,  G03F1/64

Abstract: A robust, high-transmission pellicle for extreme ultraviolet lithography systems is disclosed. In one example, the present disclosure provides a pellicle that includes a membrane and a frame supporting the membrane. The membrane may be formed from at least one of a transparent carbon-based film and a transparent silicon based film. The at least one of the transparent carbon-based film and the transparent silicon based film may further be coated with a protective shell. The frame may include at least one aperture to allow for a flow of air through a portion of the pellicle.

公开(公告)号：US20210063865A1

公开(公告)日：2021-03-04

申请号：US16889604

申请日：2020-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue LIN

IPC: G03F1/24

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.

公开(公告)号：US20210018828A1

公开(公告)日：2021-01-21

申请号：US16512795

申请日：2019-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Yue LIN

IPC: G03F1/24 ,  G03F1/58 ,  G03F1/52 ,  G03F1/48

Abstract: A method of forming a mask includes forming a reflective multilayer over a substrate; forming a capping layer over the reflective multilayer, in which the capping layer includes a ruthenium-containing material and a low carbon solubility material that has a carbon solubility lower than a carbon solubility of the ruthenium-containing material; forming an absorption layer over the capping layer; and etching the absorption layer until exposing the capping layer.

公开(公告)号：US20180173093A1

公开(公告)日：2018-06-21

申请号：US15380121

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng HSU ,  Hsin-Chang LEE ,  Yun-Yue LIN ,  Hsuan-Chen CHEN ,  Hsuan-I WANG ,  Anthony YEN

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F7/2004

Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.

公开(公告)号：US20230314926A9

公开(公告)日：2023-10-05

申请号：US17744567

申请日：2022-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue LIN

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A photolithography mask includes a substrate, a reflective multilayer structure over the substrate, an adhesion layer over the reflective multilayer structure, a capping layer over the adhesion layer, and a patterned absorber layer over the capping layer. The capping layer includes a non-crystalline conductive material.