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公开(公告)号：US20190204730A1
公开(公告)日：2019-07-04
申请号：US16228339
申请日：2018-12-20
发明人： Yun-Yue LIN , Hsuan-Chen CHEN , Chih-Cheng LIN , Hsin-Chang LEE , Yao-Ching KU , Wei-Jen LO , Anthony YEN , Chin-Hsiang LIN , Mark CHIEN
摘要： A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
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公开(公告)号：US20200152746A1
公开(公告)日：2020-05-14
申请号：US16277262
申请日：2019-02-15
发明人： Hsueh-Wen TSAU , Chun-I WU , Ziwei FANG , Huang-Lin CHAO , I-Ming CHANG , Chung-Liang CHENG , Chih-Cheng LIN
IPC分类号： H01L29/40 , H01L29/66 , H01L29/78 , H01L29/423 , H01L29/49 , H01L21/28 , H01L21/768 , H01L23/532
摘要： A method for forming a semiconductor device structure is provided. The method includes providing a substrate and an insulating layer over the substrate. The insulating layer has a trench partially exposing the substrate. The method includes forming a gate dielectric layer in the trench. The method includes forming a first metal-containing layer over the gate dielectric layer. The method includes forming a silicon-containing layer over the first metal-containing layer. The method includes forming a second metal-containing layer over the silicon-containing layer. The method includes forming a gate electrode layer in the trench and over the second metal-containing layer.
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公开(公告)号：US20200020544A1
公开(公告)日：2020-01-16
申请号：US16035159
申请日：2018-07-13
发明人： I-Ming CHANG , Chih-Cheng LIN , Chi-Ying WU , Wei-Ming YOU , Ziwei FANG , Huang-Lin CHAO
IPC分类号： H01L21/322 , H01L21/28 , H01L29/66 , H01L29/78 , H01L21/762 , H01L29/165
摘要： A method for forming a semiconductor device structure is provided. The method includes depositing a gate dielectric layer over a substrate. The substrate has a base portion and a first fin portion over the base portion, and the gate dielectric layer is over the first fin portion. The method includes forming a gate electrode layer over the gate dielectric layer. The gate electrode layer includes fluorine. The method includes annealing the gate electrode layer and the gate dielectric layer so that fluorine from the gate electrode layer diffuses into the gate dielectric layer.
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公开(公告)号：US20190155140A1
公开(公告)日：2019-05-23
申请号：US15967159
申请日：2018-04-30
发明人： Hsin-Chang LEE , Ping-Hsun LIN , Yen-Cheng HO , Chih-Cheng LIN , Chia-Jen CHEN
摘要： A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.
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公开(公告)号：US20180173092A1
公开(公告)日：2018-06-21
申请号：US15381033
申请日：2016-12-15
发明人： Yun-Yue LIN , Hsuan-Chen CHEN , Chih-Cheng LIN , Hsin-Chang LEE , Yao-Ching KU , Wei-Jen LO , Anthony YEN , Chin-Hsiang LIN , Mark CHIEN
摘要： A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.
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