公开(公告)号：US20230013260A1

公开(公告)日：2023-01-19

申请号：US17716522

申请日：2022-04-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Jhih LIN ,  Pei-Cheng HSU ,  Ta-Cheng LIEN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F7/20 ,  G03F1/24 ,  G03F1/56 ,  G03F7/09

Abstract: A method for lithographically patterning a photoresist is provided. The method includes receiving a wafer with the photoresist and exposing the photoresist using an extreme ultraviolet (EUV) radiation reflected by an EUV mask. The EUV mask includes a substrate, a reflective multilayer stack on the substrate, a capping layer on the reflective multilayer stack, a patterned absorber layer on the capping layer. The patterned absorber layer includes a matrix metal and an interstitial element occupying interstitial sites of the matrix metal, and a size ratio of the interstitial element to the matrix metal is from about 0.41 to about 0.59.