公开(公告)号：US10825684B2

公开(公告)日：2020-11-03

申请号：US15400842

申请日：2017-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Chien-Chih Chen ,  Kuo-Chang Kau ,  Jeng-Horng Chen ,  Pi-Yeh Chia ,  Chi-Ren Chen ,  Ying-Chih Lin

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/039 ,  G03F7/038 ,  G03F7/26

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.