公开(公告)号：US09570302B1

公开(公告)日：2017-02-14

申请号：US15040533

申请日：2016-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

IPC: H01L21/027 ,  H01L21/02

CPC classification number: H01L21/02172 ,  H01L21/02118 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.

Abstract translation: 公开了制造半导体器件的方法。 该方法包括在衬底上形成辐射可去除材料（RRM）层，并通过将RRM层的第一部分暴露于辐射束来移除衬底的第一区域中的RRM层的第一部分。 在去除第一区域中的RRM层的第一部分之后，在衬底的第二区域中的RRM层的第二部分保留。 该方法还包括在衬底的第二区域中的RRM层的第二部分上形成选择性形成层（SFL），并在衬底的第一区域上形成材料层。

公开(公告)号：US10514610B2

公开(公告)日：2019-12-24

申请号：US16030189

申请日：2018-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

IPC: G03F7/20 ,  G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  B05D1/00 ,  B05D3/06 ,  H01L21/027 ,  H01L21/311 ,  H01L21/687 ,  H01L21/02 ,  G03F7/004 ,  G03F7/038

Abstract: Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

公开(公告)号：US20180314167A1

公开(公告)日：2018-11-01

申请号：US16030189

申请日：2018-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

IPC: G03F7/20 ,  H01L21/687 ,  B05D1/00 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  G03F7/40 ,  G03F7/38 ,  G03F7/16 ,  G03F7/11 ,  G03F7/038 ,  G03F7/004 ,  B05D3/06

Abstract: Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

公开(公告)号：US10825684B2

公开(公告)日：2020-11-03

申请号：US15400842

申请日：2017-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Chien-Chih Chen ,  Kuo-Chang Kau ,  Jeng-Horng Chen ,  Pi-Yeh Chia ,  Chi-Ren Chen ,  Ying-Chih Lin

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/039 ,  G03F7/038 ,  G03F7/26

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

公开(公告)号：US10018920B2

公开(公告)日：2018-07-10

申请号：US15061860

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  B05D1/00 ,  B05D3/06 ,  H01L21/027 ,  H01L21/311 ,  H01L21/687 ,  H01L21/02

CPC classification number: G03F7/70341 ,  B05D1/60 ,  B05D3/06 ,  B05D3/061 ,  B05D3/068 ,  G03F7/0042 ,  G03F7/038 ,  G03F7/11 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/201 ,  G03F7/2037 ,  G03F7/2039 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70325 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/687 ,  H01L21/68764

Abstract: Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.