公开(公告)号：US20150085264A1

公开(公告)日：2015-03-26

申请号：US14035268

申请日：2013-09-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

IPC: G03F7/20

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract translation: EUV收集器在EUV光刻系统的操作期间或之间旋转。 旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。 这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。 在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。 通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。

公开(公告)号：US10825684B2

公开(公告)日：2020-11-03

申请号：US15400842

申请日：2017-01-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Chien-Chih Chen ,  Kuo-Chang Kau ,  Jeng-Horng Chen ,  Pi-Yeh Chia ,  Chi-Ren Chen ,  Ying-Chih Lin

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/033 ,  H01L21/768 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/039 ,  G03F7/038 ,  G03F7/26

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

公开(公告)号：US10018920B2

公开(公告)日：2018-07-10

申请号：US15061860

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

IPC: G03F7/004 ,  G03F7/11 ,  G03F7/20 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  B05D1/00 ,  B05D3/06 ,  H01L21/027 ,  H01L21/311 ,  H01L21/687 ,  H01L21/02

CPC classification number: G03F7/70341 ,  B05D1/60 ,  B05D3/06 ,  B05D3/061 ,  B05D3/068 ,  G03F7/0042 ,  G03F7/038 ,  G03F7/11 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/201 ,  G03F7/2037 ,  G03F7/2039 ,  G03F7/38 ,  G03F7/40 ,  G03F7/70325 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/0271 ,  H01L21/0274 ,  H01L21/0277 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/31144 ,  H01L21/687 ,  H01L21/68764

Abstract: Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

公开(公告)号：US09570302B1

公开(公告)日：2017-02-14

申请号：US15040533

申请日：2016-02-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

IPC: H01L21/027 ,  H01L21/02

CPC classification number: H01L21/02172 ,  H01L21/02118 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/32

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.

Abstract translation: 公开了制造半导体器件的方法。 该方法包括在衬底上形成辐射可去除材料（RRM）层，并通过将RRM层的第一部分暴露于辐射束来移除衬底的第一区域中的RRM层的第一部分。 在去除第一区域中的RRM层的第一部分之后，在衬底的第二区域中的RRM层的第二部分保留。 该方法还包括在衬底的第二区域中的RRM层的第二部分上形成选择性形成层（SFL），并在衬底的第一区域上形成材料层。

公开(公告)号：US20160370705A1

公开(公告)日：2016-12-22

申请号：US15249989

申请日：2016-08-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

IPC: G03F7/20 ,  G02B7/182 ,  G21K1/06 ,  G02B5/08

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

公开(公告)号：US09429858B2

公开(公告)日：2016-08-30

申请号：US14035268

申请日：2013-09-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh Chien ,  Shu-Hao Chang ,  Jui-Ching Wu ,  Tsung-Yu Chen ,  Tzu-Hsiang Chen ,  Ming-Chin Chien ,  Chia-Chen Chen ,  Jeng-Horng Chen

IPC: G03F7/20

CPC classification number: G03F7/7015 ,  G02B5/0891 ,  G02B7/1821 ,  G03F7/2008 ,  G03F7/2037 ,  G03F7/70033 ,  G03F7/70175 ,  G03F7/70916 ,  G03F7/70925 ,  G21K1/067

Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.

Abstract translation: EUV收集器在EUV光刻系统的操作期间或之间旋转。 旋转EUV收集器导致污染物更均匀地分布在收集器的表面上。 这降低了EUV光刻系统随着污染增加而失去图像保真度并从而增加了集电器寿命的速率。 在EUV光刻系统运行期间旋转收集器可以引起对流并降低污染率。 通过以足够的速度旋转收集器，可以通过离心力的作用去除一些污染的碎屑。

公开(公告)号：US10514610B2

公开(公告)日：2019-12-24

申请号：US16030189

申请日：2018-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

IPC: G03F7/20 ,  G03F7/11 ,  G03F7/16 ,  G03F7/38 ,  G03F7/40 ,  B05D1/00 ,  B05D3/06 ,  H01L21/027 ,  H01L21/311 ,  H01L21/687 ,  H01L21/02 ,  G03F7/004 ,  G03F7/038

Abstract: Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

公开(公告)号：US20180314167A1

公开(公告)日：2018-11-01

申请号：US16030189

申请日：2018-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Hao Chang ,  Kuo-Chang Kau ,  Kevin Huang ,  Jeng-Horng Chen

IPC: G03F7/20 ,  H01L21/687 ,  B05D1/00 ,  H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  G03F7/40 ,  G03F7/38 ,  G03F7/16 ,  G03F7/11 ,  G03F7/038 ,  G03F7/004 ,  B05D3/06

Abstract: Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

公开(公告)号：US11624985B2

公开(公告)日：2023-04-11

申请号：US17063386

申请日：2020-10-05

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ta-Ching Yu ,  Shih-Che Wang ,  Shu-Hao Chang ,  Yi-Hao Chen ,  Chen-Yen Kao ,  Te-Chih Huang ,  Yuan-Fu Hsu

IPC: H01L21/66 ,  G03F7/20 ,  G01N21/956 ,  H01L21/027 ,  G01N21/89 ,  G06T7/00 ,  G01N21/88

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.

公开(公告)号：US10795270B2

公开(公告)日：2020-10-06

申请号：US15833640

申请日：2017-12-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Ching Yu ,  Shih-Che Wang ,  Shu-Hao Chang ,  Yi-Hao Chen ,  Chen-Yen Kao ,  Te-Chih Huang ,  Yuan-Fu Hsu

IPC: H01L21/311 ,  G03F7/20 ,  G01N21/956 ,  H01L21/027 ,  G01N21/89 ,  G06T7/00 ,  H01L21/66 ,  G01N21/88

Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.