公开(公告)号：US20240379494A1

公开(公告)日：2024-11-14

申请号：US18784233

申请日：2024-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu Chen Lee ,  Shu-Shen Yeh ,  Chia-Kuei Hsu ,  Po-Yao Lin ,  Shin-Puu Jeng

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L25/065

Abstract: A semiconductor structure includes: a substrate; a package attached to a first surface of the substrate, where the package includes: an interposer, where a first side of the interposer is bonded to the first surface of the substrate through first conductive bumps; dies attached to a second side of the interposer opposing the first side; and a molding material on the second side of the interposer around the dies; a plurality of thermal interface material (TIM) films on a first surface of the package distal from the substrate, where each of the TIM films is disposed directly over at least one respective die of the dies; and a heat-dissipation lid attached to the first surface of the substrate, where the package and the plurality of TIM films are disposed in an enclosed space between the heat-dissipation lid and the substrate, where the heat-dissipation lid contacts the plurality of TIM films.

公开(公告)号：US20230369164A1

公开(公告)日：2023-11-16

申请号：US18360484

申请日：2023-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu Chen Lee ,  Shu-Shen Yeh ,  Chia-Kuei Hsu ,  Po-Yao Lin ,  Shin-Puu Jeng

IPC: H01L23/373 ,  H01L23/498 ,  H01L25/065 ,  H01L23/00 ,  H01L23/367 ,  H01L23/31

CPC classification number: H01L23/3735 ,  H01L23/49838 ,  H01L25/0655 ,  H01L24/73 ,  H01L23/49833 ,  H01L23/3675 ,  H01L23/49822 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/16 ,  H01L2924/16251 ,  H01L2224/16238 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2924/182

Abstract: A semiconductor structure includes: a substrate; a package attached to a first surface of the substrate, where the package includes: an interposer, where a first side of the interposer is bonded to the first surface of the substrate through first conductive bumps; dies attached to a second side of the interposer opposing the first side; and a molding material on the second side of the interposer around the dies; a plurality of thermal interface material (TIM) films on a first surface of the package distal from the substrate, where each of the TIM films is disposed directly over at least one respective die of the dies; and a heat-dissipation lid attached to the first surface of the substrate, where the package and the plurality of TIM films are disposed in an enclosed space between the heat-dissipation lid and the substrate, where the heat-dissipation lid contacts the plurality of TIM films.

公开(公告)号：US20220384304A1

公开(公告)日：2022-12-01

申请号：US17370591

申请日：2021-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu Chen Lee ,  Shu-Shen Yeh ,  Chia-Kuei Hsu ,  Po-Yao Lin ,  Shin-Puu Jeng

IPC: H01L23/373 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor structure includes: a substrate; a package attached to a first surface of the substrate, where the package includes: an interposer, where a first side of the interposer is bonded to the first surface of the substrate through first conductive bumps; dies attached to a second side of the interposer opposing the first side; and a molding material on the second side of the interposer around the dies; a plurality of thermal interface material (TIM) films on a first surface of the package distal from the substrate, where each of the TIM films is disposed directly over at least one respective die of the dies; and a heat-dissipation lid attached to the first surface of the substrate, where the package and the plurality of TIM films are disposed in an enclosed space between the heat-dissipation lid and the substrate, where the heat-dissipation lid contacts the plurality of TIM films.

公开(公告)号：US20230411234A1

公开(公告)日：2023-12-21

申请号：US17825748

申请日：2022-05-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shu-Shen Yeh ,  Yu Chen Lee ,  Po-Chen Lai ,  Po-Yao Lin ,  Shin-Puu Jeng ,  Yu-Sheng Lin ,  Chien-Hung Chen

IPC: H01L23/367 ,  H01L23/538 ,  H01L23/00

CPC classification number: H01L23/3675 ,  H01L23/5385 ,  H01L2224/32245 ,  H01L24/83 ,  H01L24/32

Abstract: A device includes a package substrate, an interposer having a first side bonded to the package substrate, a first die bonded to a second side of the interposer, the second side being opposite the first side, a ring on the package substrate, wherein the ring surrounds the first die and the interposer; and a heat spreader over and coupled to the ring and the first die, wherein a first coefficient of thermal expansion of a first material of the ring and a second coefficient of thermal expansion of a second material of the heat spreader are different, and wherein in a cross-sectional view a combined structure of the heat spreader and the ring have a H-shaped profile.

公开(公告)号：US12300568B2

公开(公告)日：2025-05-13

申请号：US17370591

申请日：2021-07-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu Chen Lee ,  Shu-Shen Yeh ,  Chia-Kuei Hsu ,  Po-Yao Lin ,  Shin-Puu Jeng

IPC: H01L23/373 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/498 ,  H01L25/065

Abstract: A semiconductor structure includes: a substrate; a package attached to a first surface of the substrate, where the package includes: an interposer, where a first side of the interposer is bonded to the first surface of the substrate through first conductive bumps; dies attached to a second side of the interposer opposing the first side; and a molding material on the second side of the interposer around the dies; a plurality of thermal interface material (TIM) films on a first surface of the package distal from the substrate, where each of the TIM films is disposed directly over at least one respective die of the dies; and a heat-dissipation lid attached to the first surface of the substrate, where the package and the plurality of TIM films are disposed in an enclosed space between the heat-dissipation lid and the substrate, where the heat-dissipation lid contacts the plurality of TIM films.