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公开(公告)号:US10790164B1
公开(公告)日:2020-09-29
申请号:US16439944
申请日:2019-06-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Wen-Yi Lin , Che-Chia Yang , Kuang-Chun Lee , Yu-Sheng Lin , Po-Yao Lin , Shin-Puu Jeng
IPC: H01L23/373 , H01L21/56 , H01L23/00 , H01L23/31 , H01L23/48 , H01L23/522 , H01L25/065 , H01L23/29
Abstract: A method for forming a package structure is provided. The method includes forming a first die over a first substrate, and injecting a molding compound material from a first side of the first die to a second side of the first die. The molding compound material includes a plurality of first fillers, each of the first fillers has a length along a longitudinal axis and a width along a transverse direction, and the length is greater than the width. The method further includes heating the molding compound material to form a package layer over the first die, and the first fillers are substantially parallel to each other.
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公开(公告)号:US20230411234A1
公开(公告)日:2023-12-21
申请号:US17825748
申请日:2022-05-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Shu-Shen Yeh , Yu Chen Lee , Po-Chen Lai , Po-Yao Lin , Shin-Puu Jeng , Yu-Sheng Lin , Chien-Hung Chen
IPC: H01L23/367 , H01L23/538 , H01L23/00
CPC classification number: H01L23/3675 , H01L23/5385 , H01L2224/32245 , H01L24/83 , H01L24/32
Abstract: A device includes a package substrate, an interposer having a first side bonded to the package substrate, a first die bonded to a second side of the interposer, the second side being opposite the first side, a ring on the package substrate, wherein the ring surrounds the first die and the interposer; and a heat spreader over and coupled to the ring and the first die, wherein a first coefficient of thermal expansion of a first material of the ring and a second coefficient of thermal expansion of a second material of the heat spreader are different, and wherein in a cross-sectional view a combined structure of the heat spreader and the ring have a H-shaped profile.
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公开(公告)号:US20230386951A1
公开(公告)日:2023-11-30
申请号:US17828691
申请日:2022-05-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Sheng Lin , Chien-Tung Yu , Chia-Hsiang Lin , Chin-Hua Wang , Shin-Puu Jeng
IPC: H01L23/31 , H01L25/065 , H01L23/00 , H01L23/538 , H01L21/683 , H01L21/48 , H01L21/56 , H01L25/00
CPC classification number: H01L23/3135 , H01L25/0655 , H01L24/16 , H01L23/3128 , H01L23/5383 , H01L23/5386 , H01L21/6835 , H01L21/4853 , H01L21/4857 , H01L21/563 , H01L21/565 , H01L25/50 , H01L2221/68359 , H01L2224/16227 , H01L2924/18161 , H01L2924/351
Abstract: In an embodiment, a package including: a redistribution structure including a first dielectric layer and a first conductive element disposed in the first dielectric layer; a first semiconductor device bonded to the redistribution structure, wherein the first semiconductor device includes a first corner; and an underfill disposed over the redistribution structure and including a first protrusion extending into the first dielectric layer of the redistribution structure, wherein the first protrusion of the underfill overlaps the first corner of the first semiconductor device in a plan view.
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公开(公告)号:US20210090906A1
公开(公告)日:2021-03-25
申请号:US17099180
申请日:2020-11-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Yu Tsai , Tsung-Shang Wei , Yu-Sheng Lin , Wen-Chih Chiou , Shin-Puu Jeng
IPC: H01L21/56 , H01L25/065 , H01L25/00 , H01L23/60 , H01L21/48 , H01L23/538 , H01L23/00 , H01L21/683 , H01L23/16 , H01L23/31 , H01L23/29 , H01L23/498
Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor die and a second semiconductor die to a first substrate, forming a conductive layer over the first semiconductor die, the second semiconductor die, and the first substrate, applying an encapsulant over the conductive layer, and removing a portion of the encapsulant, wherein the removing the portion of the encapsulant exposes the conductive layer.
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公开(公告)号:US20230387063A1
公开(公告)日:2023-11-30
申请号:US17664689
申请日:2022-05-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Sheng Lin , Shu-Shen Yeh , Ming-Chih Yew , Chin-Hua Wang , Shin-Puu Jeng
IPC: H01L23/00 , H01L25/065 , H01L23/498
CPC classification number: H01L24/32 , H01L24/27 , H01L25/0655 , H01L23/49833 , H01L2924/3511 , H01L2924/35121 , H01L2924/37001 , H01L24/16 , H01L24/73 , H01L2224/73204 , H01L2224/16227 , H01L2224/16237 , H01L2224/32225 , H01L2224/26155 , H01L2224/3201 , H01L2224/27013 , H01L2924/1436 , H01L2924/1431 , H01L23/49838 , H01L23/49822 , H01L23/49816
Abstract: A package includes a package substrate, the package substrate having a first side and a second side opposite to the first side, a package component bonded to the first side of the package substrate, a front-side warpage control structure attached to the first side of the package substrate, and a backside warpage control structure embedded in the package substrate from the second side of the package substrate. The front-side warpage control structure includes a first disconnected structure and a second disconnected structure laterally separated from each other by a gap. The backside warpage control structure includes a third disconnected structure and a fourth disconnected structure laterally separated from each other.
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公开(公告)号:US20230378092A1
公开(公告)日:2023-11-23
申请号:US17663692
申请日:2022-05-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Chen Lai , Ming-Chih Yew , Shin-Puu Jeng , Yu-Sheng Lin
IPC: H01L23/00 , H01L25/065 , H01L25/00
CPC classification number: H01L23/562 , H01L25/0655 , H01L24/73 , H01L24/32 , H01L24/16 , H01L25/50 , H01L2924/1434 , H01L2924/1431 , H01L2924/3511 , H01L2924/35121 , H01L2224/73204 , H01L2224/16235 , H01L2224/32225 , H01L2924/1711 , H01L2924/172
Abstract: A semiconductor package including a recessed stiffener ring and a method of forming are provided. The semiconductor package may include a substrate, a semiconductor die bonded to the substrate, an underfill between the semiconductor die and the substrate, and a stiffener ring attached to the substrate, wherein the stiffener ring encircles the semiconductor die in a top view. The stiffener ring may include a recess that faces the semiconductor die.
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