公开(公告)号：US20240395910A1

公开(公告)日：2024-11-28

申请号：US18788579

申请日：2024-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Hsu ,  Yu-Chun Ko ,  Yu-Chang Liang ,  Kao-Ting Lai

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/78

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.

公开(公告)号：US10770571B2

公开(公告)日：2020-09-08

申请号：US16261307

申请日：2019-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Hsu ,  Yu-Chun Ko ,  Yu-Chang Liang ,  Kao-Ting Lai

IPC: H01L29/66 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/78

Abstract: A semiconductor structure includes semiconductor fins protruding out of a substrate, dielectric fins protruding out of the substrate and disposed among the semiconductor fins, and gate stacks disposed over the semiconductor fins and the dielectric fins. The dielectric fins include a first dielectric material layer, a second dielectric material layer disposed over the first dielectric material layer, and a third dielectric material layer disposed over the second dielectric material layer, where the first and second dielectric material layers have different compositions and the first and the third dielectric material layers have the same compositions.

公开(公告)号：US11677014B2

公开(公告)日：2023-06-13

申请号：US17357807

申请日：2021-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Hsu ,  Yu-Chun Ko ,  Yu-Chang Liang ,  Kao-Ting Lai

IPC: H01L29/66 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L21/0228 ,  H01L21/31055 ,  H01L29/7851

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.

公开(公告)号：US20200091311A1

公开(公告)日：2020-03-19

申请号：US16261307

申请日：2019-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Hsu ,  Yu-Chun Ko ,  Yu-Chang Liang ,  Kao-Ting Lai

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/3105

Abstract: A semiconductor structure includes semiconductor fins protruding out of a substrate, dielectric fins protruding out of the substrate and disposed among the semiconductor fins, and gate stacks disposed over the semiconductor fins and the dielectric fins. The dielectric fins include a first dielectric material layer, a second dielectric material layer disposed over the first dielectric material layer, and a third dielectric material layer disposed over the second dielectric material layer, where the first and second dielectric material layers have different compositions and the first and the third dielectric material layers have the same compositions.

公开(公告)号：US11049959B2

公开(公告)日：2021-06-29

申请号：US17012222

申请日：2020-09-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Hsu ,  Yu-Chun Ko ,  Yu-Chang Liang ,  Kao-Ting Lai

IPC: H01L29/66 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/78

Abstract: A method of fabricating a semiconductor device includes forming a semiconductor fin structure over a substrate, where the semiconductor fin structure includes a plurality of semiconductor fins and defines trenches among the semiconductor fins, and forming a dielectric fin structure having a plurality of dielectric fins. Forming the dielectric fin structure includes filling the trenches with a first dielectric material layer and a second dielectric material layer over the first dielectric material layer, the second dielectric material layer having a composition different from that of the first dielectric material layer, removing a portion of the second dielectric material layer to form a recess, and filling the recess with a third dielectric material layer, the third dielectric material layer having the same composition as the first dielectric material layer.

公开(公告)号：US12266716B2

公开(公告)日：2025-04-01

申请号：US18332936

申请日：2023-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Hsu ,  Yu-Chun Ko ,  Yu-Chang Liang ,  Kao-Ting Lai

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/78

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.

公开(公告)号：US20230327005A1

公开(公告)日：2023-10-12

申请号：US18332936

申请日：2023-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Hsu ,  Yu-Chun Ko ,  Yu-Chang Liang ,  Kao-Ting Lai

IPC: H01L29/66 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/78

CPC classification number: H01L29/6681 ,  H01L29/7851 ,  H01L21/0228 ,  H01L21/31055

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.

公开(公告)号：US20210320188A1

公开(公告)日：2021-10-14

申请号：US17357807

申请日：2021-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Hao Hsu ,  Yu-Chun Ko ,  Yu-Chang Liang ,  Kao-Ting Lai

IPC: H01L29/66 ,  H01L21/3105 ,  H01L21/02 ,  H01L29/78

Abstract: A semiconductor structure includes a semiconductor fin protruding from a substrate and oriented lengthwise along a first direction, a dielectric fin disposed over the substrate and oriented lengthwise along a second direction perpendicular to the first direction, where the dielectric fin defines a sidewall of the semiconductor fin along the second direction and where the dielectric fin includes a first dielectric layer disposed over a second dielectric layer that differs from the first dielectric layer in composition, and a metal gate stack disposed over the semiconductor fin and oriented lengthwise along the second direction.