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公开(公告)号:US20210165315A1
公开(公告)日:2021-06-03
申请号:US17171119
申请日:2021-02-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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公开(公告)号:US20190163076A1
公开(公告)日:2019-05-30
申请号:US15962518
申请日:2018-04-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Yu-Piao Fang
Abstract: A structure includes a first periodic structure positioned on a chip, the first periodic structure comprising a material of a first layer disposed on the chip. The structure further includes a second periodic structure positioned within the region of the chip adjacent the first periodic structure, the second periodic structure comprising a second material of a second layer disposed on the chip. The structure further includes an acoustic wave transmitter device disposed on the chip and an acoustic wave receiver device disposed on the chip.
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公开(公告)号:US20240385533A1
公开(公告)日:2024-11-21
申请号:US18787521
申请日:2024-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Yu-Piao Fang
Abstract: A structure includes a first periodic structure, a second periodic structure, and a third periodic structure disposed on a chip, and a first acoustic wave transmitter device, a first acoustic wave receiver device, a second acoustic wave transmitter device, and a second acoustic wave receiver device disposed on the chip. The first acoustic wave transmitter device is configured to transmit a first acoustic wave across both the first periodic structure and the second periodic structure, and the second acoustic wave transmitter device is configured to transmit a second acoustic wave across both the first periodic structure and the third periodic structure.
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公开(公告)号:US20210249283A1
公开(公告)日:2021-08-12
申请号:US17232326
申请日:2021-04-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Yu-Piao Fang
IPC: H01L21/677 , G03F7/20 , G03F1/22 , H01L21/673 , G03F1/66
Abstract: A transportation container is provided with a container body constructed of a top wall, a bottom wall, a rear wall, and two sidewalls forming a front opening for loading or unloading a reticle pod into or out of the container body; a lid for opening and closing the front opening; and a lift plate above the container body configured to connect to a carrier of an overhead hoist transfer (OHT) system.
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公开(公告)号:US11022889B2
公开(公告)日:2021-06-01
申请号:US16100365
申请日:2018-08-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Yu-Piao Fang
Abstract: Methods for manufacturing a semiconductor structure are provided. A substrate is provided. A first lithography is performed according to a first layer mask, to form a plurality of first photonic crystals with a first pitch on a first area of a layer above the substrate. A second lithography is performed according to a second layer mask, to form a plurality of second photonic crystals with a second pitch on a second area of the layer. A light is provided to illuminate the first and second photonic crystals. Light reflected by the first and second photonic crystals or transmitted through the first and second photonic crystals is received. The received light is analyzed to detect overlay-shift between the first photonic crystals corresponding to the first layer mask and the second photonic crystals corresponding to the second layer mask.
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公开(公告)号:US10915017B2
公开(公告)日:2021-02-09
申请号:US16026309
申请日:2018-07-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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公开(公告)号:US20240012340A1
公开(公告)日:2024-01-11
申请号:US18366097
申请日:2023-08-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
IPC: G03F7/00 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544
CPC classification number: G03F7/70633 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544 , H01L2223/54426
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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公开(公告)号:US20210216022A1
公开(公告)日:2021-07-15
申请号:US17215676
申请日:2021-03-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Yu-Piao Fang
Abstract: A method includes forming a first material layer on a semiconductor wafer, the first material layer comprising a first periodic structure within an overlay mark region of the semiconductor wafer and forming a second material layer on the semiconductor wafer, the second material layer comprising a second periodic structure in the overlay mark region. The method further includes with an acoustic transmitter device disposed within the overlay mark region, transmitting an acoustic wave across both the first periodic structure and the second periodic structure. The method further includes, with an acoustic wave receiver device, detecting the acoustic wave and determining an overlay error between the first material layer and the second material layer based on the acoustic wave as detected by the acoustic wave receiver device.
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公开(公告)号:US20190131147A1
公开(公告)日:2019-05-02
申请号:US15797654
申请日:2017-10-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Yu-Piao Fang
IPC: H01L21/677 , G03F7/20 , G03F1/22
Abstract: A transportation container is provided with a container body constructed of a top wall, a bottom wall, a rear wall, and two sidewalls forming a front opening for loading or unloading a reticle pod into or out of the container body; a lid for opening and closing the front opening; and a lift plate above the container body configured to connect to a carrier of an overhead hoist transfer (OHT) system.
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公开(公告)号:US12189304B2
公开(公告)日:2025-01-07
申请号:US17215676
申请日:2021-03-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yu-Ching Lee , Yu-Piao Fang
Abstract: A method includes forming a first material layer on a semiconductor wafer, the first material layer comprising a first periodic structure within an overlay mark region of the semiconductor wafer and forming a second material layer on the semiconductor wafer, the second material layer comprising a second periodic structure in the overlay mark region. The method further includes with an acoustic transmitter device disposed within the overlay mark region, transmitting an acoustic wave across both the first periodic structure and the second periodic structure. The method further includes, with an acoustic wave receiver device, detecting the acoustic wave and determining an overlay error between the first material layer and the second material layer based on the acoustic wave as detected by the acoustic wave receiver device.
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