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1.发明公开公开(公告)号：US20240012340A1
公开(公告)日：2024-01-11
申请号：US18366097
申请日：2023-08-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
IPC: G03F7/00 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544
CPC classification number: G03F7/70633 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544 , H01L2223/54426
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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公开(公告)号：US12055860B2
公开(公告)日：2024-08-06
申请号：US18366097
申请日：2023-08-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
IPC: G03F7/00 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544
CPC classification number: G03F7/70633 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544 , H01L2223/54426
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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公开(公告)号：US11624985B2
公开(公告)日：2023-04-11
申请号：US17063386
申请日：2020-10-05
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ta-Ching Yu , Shih-Che Wang , Shu-Hao Chang , Yi-Hao Chen , Chen-Yen Kao , Te-Chih Huang , Yuan-Fu Hsu
IPC: H01L21/66 , G03F7/20 , G01N21/956 , H01L21/027 , G01N21/89 , G06T7/00 , G01N21/88
Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
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公开(公告)号：US10795270B2
公开(公告)日：2020-10-06
申请号：US15833640
申请日：2017-12-06
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ta-Ching Yu , Shih-Che Wang , Shu-Hao Chang , Yi-Hao Chen , Chen-Yen Kao , Te-Chih Huang , Yuan-Fu Hsu
IPC: H01L21/311 , G03F7/20 , G01N21/956 , H01L21/027 , G01N21/89 , G06T7/00 , H01L21/66 , G01N21/88
Abstract: Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
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5.发明申请公开(公告)号：US20190064654A1
公开(公告)日：2019-02-28
申请号：US16026309
申请日：2018-07-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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Patent Agency Ranking
公开(公告)号：US12196687B2
公开(公告)日：2025-01-14
申请号：US17084625
申请日：2020-10-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Ju-Ying Chen , Che-Yen Lee , Chia-Fong Chang , Hua-Tai Lin , Te-Chih Huang , Chi-Yuan Sun , Jiann Yuan Huang
Abstract: In a method for inspecting pattern defects, a plurality of patterns are formed over an underlying layer. The plurality of patterns are electrically isolated from each other. A part of the plurality of patterns are scanned with an electron beam to charge the plurality of patterns. An intensity of secondary electrons emitted from the scanned part of the plurality of patterns is obtained. One or more of the plurality of patterns that show an intensity of the secondary electrons different from others of the plurality of patterns are searched.
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公开(公告)号：US20210165315A1
公开(公告)日：2021-06-03
申请号：US17171119
申请日：2021-02-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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公开(公告)号：US10915017B2
公开(公告)日：2021-02-09
申请号：US16026309
申请日：2018-07-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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公开(公告)号：US11835864B2
公开(公告)日：2023-12-05
申请号：US17816030
申请日：2022-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
IPC: H01L23/544 , G03F7/00 , G03F1/22 , G03F1/24 , G03F1/42
CPC classification number: G03F7/70633 , G03F1/22 , G03F1/24 , G03F1/42 , H01L23/544 , H01L2223/54426
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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10.发明申请公开(公告)号：US20220384358A1
公开(公告)日：2022-12-01
申请号：US17816030
申请日：2022-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Ching Lee , Te-Chih Huang , Yu-Piao Fang
IPC: H01L23/544 , G03F7/20
Abstract: An overlay mark includes a first, a second, a third, and a fourth component. The first component is located in a first region of the first overlay mark and includes a plurality of gratings that extend in a first direction. The second component is located in a second region of the first overlay mark and includes a plurality of gratings that extend in the first direction. The third component is located in a third region of the first overlay mark and includes a plurality of gratings that extend in a second direction different from the first direction. The fourth component is located in a fourth region of the first overlay mark and includes a plurality of gratings that extend in the second direction. The first region is aligned with the second region. The third region is aligned with the fourth region.
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