公开(公告)号：US20170204529A1

公开(公告)日：2017-07-20

申请号：US15132099

申请日：2016-04-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jun-Nan NIAN ,  Jyun-Ru WU ,  Shiu-Ko JANGJIAN ,  Yu-Ren PENG ,  Chi-Cheng HUNG ,  Yu-Sheng WANG

IPC: C25D5/16 ,  C25D7/00 ,  C25D3/38

Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

公开(公告)号：US20210238765A1

公开(公告)日：2021-08-05

申请号：US17238080

申请日：2021-04-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan NIAN ,  Shiu-Ko JANGJIAN ,  Yu-Ren PENG ,  Yao-Hsiang LIANG ,  Ting-Chun WANG

IPC: C25D17/00 ,  C25D21/12 ,  C25D3/38 ,  H01L21/768

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

公开(公告)号：US20200173051A1

公开(公告)日：2020-06-04

申请号：US16677563

申请日：2019-11-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko JANGJIAN ,  Ting-Chun WANG ,  Ing-Ju LEE ,  Yu-Ren PENG ,  Yao-Hsiang LIANG

IPC: C25D17/00 ,  C25D21/12

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

公开(公告)号：US20200176310A1

公开(公告)日：2020-06-04

申请号：US16698528

申请日：2019-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan Nian ,  Shiu-Ko JANGJIAN ,  Yu-Ren PENG ,  Yao-Hsiang LIANG ,  Ting-Chun WANG

IPC: H01L21/768 ,  C25D17/00 ,  C25D21/12 ,  C25D3/38

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.