公开(公告)号：US20210238765A1

公开(公告)日：2021-08-05

申请号：US17238080

申请日：2021-04-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jun-Nan NIAN ,  Shiu-Ko JANGJIAN ,  Yu-Ren PENG ,  Yao-Hsiang LIANG ,  Ting-Chun WANG

IPC: C25D17/00 ,  C25D21/12 ,  C25D3/38 ,  H01L21/768

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

公开(公告)号：US20180138128A1

公开(公告)日：2018-05-17

申请号：US15870810

申请日：2018-01-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jun-Nan NIAN ,  Shiu-Ko JANGJIAN ,  Chi-Cheng HUNG ,  Yu-Sheng WANG ,  Hung-Hsu CHEN

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/288 ,  B32B15/01

CPC classification number: H01L23/53238 ,  B32B15/01 ,  C25D3/38 ,  C25D5/02 ,  C25D5/10 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877

Abstract: In a method for manufacturing an interconnect structure, a dielectric layer is removed to form a first recess and a second recess. The first recess is below the second recess. A first metal layer is deposited to fill the first recess and a first portion of the second recess. A carbon-containing layer is deposited over the first metal layer to fill a second portion of the second recess, which is over the first portion. A second metal layer is deposited over the carbon-containing layer to fill a third portion of the second recess, which is over the second portion. A carbon concentration of the carbon-containing layer is greater than a carbon concentration of the first metal layer and a carbon concentration of the second metal layer, and the carbon concentration of the first metal layer is substantially the same as the carbon concentration of the second metal layer.

公开(公告)号：US20170204529A1

公开(公告)日：2017-07-20

申请号：US15132099

申请日：2016-04-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jun-Nan NIAN ,  Jyun-Ru WU ,  Shiu-Ko JANGJIAN ,  Yu-Ren PENG ,  Chi-Cheng HUNG ,  Yu-Sheng WANG

IPC: C25D5/16 ,  C25D7/00 ,  C25D3/38

Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

公开(公告)号：US20160372421A1

公开(公告)日：2016-12-22

申请号：US14743926

申请日：2015-06-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jun-Nan NIAN ,  Shiu-Ko JANGJIAN ,  Chi-Cheng HUNG ,  Yu-Sheng WANG ,  Hung-Hsu CHEN

IPC: H01L23/532 ,  H01L21/288 ,  H01L21/768 ,  B32B15/01

CPC classification number: H01L23/53238 ,  B32B15/01 ,  H01L21/2885 ,  H01L21/76877

Abstract: A copper layer structure includes a first copper layer, a second copper layer and a carbon-rich copper layer. The second copper layer is disposed over the first copper layer. The carbon-rich copper layer is sandwiched between the first copper layer and the second copper layer. A carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer.

Abstract translation: 铜层结构包括第一铜层，第二铜层和富碳铜层。 第二铜层设置在第一铜层上。 富碳铜层夹在第一铜层和第二铜层之间。 富碳铜层的碳浓度大于第一铜层的碳浓度和第二铜层的碳浓度。