公开(公告)号：US20190355687A1

公开(公告)日：2019-11-21

申请号：US15980662

申请日：2018-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hsien Huang ,  An-Jhih Su ,  Der-Chyang Yeh ,  Hua-Wei Tseng ,  Yueh-Ting Lin ,  Ming-Shih Yeh

IPC: H01L23/00 ,  H01L21/66 ,  H01L23/31 ,  H01L21/56 ,  H01L23/58

Abstract: A package structure including a semiconductor die, an insulating encapsulant, a redistribution layer and a plurality of conductive terminals is provided. The semiconductor die includes a semiconductor substrate, a plurality of conductive pads and a plurality of conductive strips. The conductive pads are disposed on and connected to the plurality of conductive pads, wherein each of the conductive strips is physically connected to at least two conductive pads. The insulating encapsulant is encapsulating the semiconductor die. The redistribution layer is disposed on the insulating encapsulant and the semiconductor die, wherein the redistribution layer is electrically connected to the plurality of conductive strips. The plurality of conductive terminals is disposed on the redistribution layer.

公开(公告)号：US11984410B2

公开(公告)日：2024-05-14

申请号：US18312705

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/482 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/58

CPC classification number: H01L23/585 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/73253 ,  H01L2924/1436

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US20230275040A1

公开(公告)日：2023-08-31

申请号：US18312705

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/58 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/585 ,  H01L23/481 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3128 ,  H01L23/5226 ,  H01L23/5283 ,  H01L21/563 ,  H01L24/17 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/73253 ,  H01L2924/1436 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02381

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US20210366845A1

公开(公告)日：2021-11-25

申请号：US17396907

申请日：2021-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/58 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L21/56

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US20200043855A1

公开(公告)日：2020-02-06

申请号：US16365611

申请日：2019-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuan-Chung Lu ,  An-Jhih Su ,  Der-Chyang Yeh ,  Li-Hsien Huang ,  Yueh-Ting Lin ,  Ming-Shih Yeh

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L25/10 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00

Abstract: A semiconductor device and the manufacturing method thereof are provided. The semiconductor device includes a package structure, a first die, a first containment structure, a pre-fill layer, and a plurality of conductive terminals. The package structure includes an attach zone, a keep-out zone around the attach zone. The first die is disposed on the package structure in the attach zone and electrically connected to the package structure. The first containment structure is disposed within the keep-out zone of the package structure and surrounds the first die. The pre-fill layer is disposed between the package structure and the first die and between the first containment structure and the first die, where the pre-fill layer is constrained within the first containment structure. The conductive terminals are disposed on the package structure, distributed around the keep-out zone of the package structure, and electrically connected to the package structure.

公开(公告)号：US11682637B2

公开(公告)日：2023-06-20

申请号：US17396907

申请日：2021-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/482 ,  H01L23/58 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/585 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/73253 ,  H01L2924/1436

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US10756037B2

公开(公告)日：2020-08-25

申请号：US15980662

申请日：2018-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hsien Huang ,  An-Jhih Su ,  Der-Chyang Yeh ,  Hua-Wei Tseng ,  Yueh-Ting Lin ,  Ming-Shih Yeh

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/58 ,  H01L21/56 ,  H01L21/66

Abstract: A package structure including a semiconductor die, an insulating encapsulant, a redistribution layer and a plurality of conductive terminals is provided. The semiconductor die includes a semiconductor substrate, a plurality of conductive pads and a plurality of conductive strips. The conductive pads are disposed on and connected to the plurality of conductive pads, wherein each of the conductive strips is physically connected to at least two conductive pads. The insulating encapsulant is encapsulating the semiconductor die. The redistribution layer is disposed on the insulating encapsulant and the semiconductor die, wherein the redistribution layer is electrically connected to the plurality of conductive strips. The plurality of conductive terminals is disposed on the redistribution layer.