公开(公告)号：US09247116B2

公开(公告)日：2016-01-26

申请号：US14211636

申请日：2014-03-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Volume Chien ,  Su-Hua Chang ,  Zen-Fong Huang ,  Chia-Yu Wei ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

IPC: H04N3/14 ,  H04N5/335 ,  H04N9/04 ,  H04N5/225 ,  H01L31/062 ,  H01L31/113

CPC classification number: H04N5/2254 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14685

Abstract: An image sensor device and a manufacturing method for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate having an array region and a periphery region. The image sensor device also includes a light sensing region in the array region of the semiconductor substrate. The image sensor device further includes a dielectric structure over the array region and the periphery region, and the dielectric structure has a substantially planar top surface. In addition, the image sensor device includes a recess in the dielectric structure and substantially aligned with the light sensing region. The image sensor device also includes a filter in the recess and a light blocking grid in the dielectric structure and surrounding a portion of the filter.

Abstract translation: 提供了一种用于形成图像传感器装置的图像传感器装置和制造方法。 图像传感器装置包括具有阵列区域和周边区域的半导体基板。 图像传感器装置还包括在半导体衬底的阵列区域中的光感测区域。 图像传感器装置还包括在阵列区域和外围区域上的电介质结构，并且电介质结构具有基本平坦的顶表面。 此外，图像传感器装置包括在电介质结构中的凹槽，并基本上与光感测区域对准。 图像传感器装置还包括位于凹槽中的滤光器和电介质结构中的遮光栅格并围绕滤光器的一部分。

公开(公告)号：US11335721B2

公开(公告)日：2022-05-17

申请号：US14073580

申请日：2013-11-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Su-Hua Chang ,  Chia-Yu Wei ,  Zen-Fong Huang ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0216

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

公开(公告)号：US20170257554A1

公开(公告)日：2017-09-07

申请号：US15060604

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zen-Fong Huang ,  Volume Chien

IPC: H04N5/232 ,  H04N5/225 ,  H01L27/146

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

公开(公告)号：US11664403B2

公开(公告)日：2023-05-30

申请号：US16900683

申请日：2020-06-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Zen-Fong Huang ,  Fu-Cheng Chang

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14623 ,  H01L27/14685 ,  H01L27/14621 ,  H01L27/14627

Abstract: An image sensor device includes a substrate, a deep-trench isolation structure, a buffer layer, and a light blocking structure. The substrate has a photosensitive region. The deep-trench isolation structure is in the substrate and adjacent the photosensitive region. The buffer layer is over the photosensitive region and the deep-trench isolation structure. The light blocking structure is over the buffer layer. A bottom portion of the light blocking structure is embedded in the buffer layer.

公开(公告)号：US10484590B2

公开(公告)日：2019-11-19

申请号：US15060604

申请日：2016-03-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zen-Fong Huang ,  Volume Chien

IPC: H04N5/232 ,  H01L27/146 ,  H04N5/225

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

公开(公告)号：US12288798B2

公开(公告)日：2025-04-29

申请号：US18360605

申请日：2023-07-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Su-Hua Chang ,  Chia-Yu Wei ,  Zen-Fong Huang ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0216

Abstract: An image sensor includes a pixel array, a dielectric layer, a plurality of first conductive shielding regions, and a plurality of second conductive shielding regions. The pixel array includes photodiodes within a substrate. The dielectric layer is over the substrate. From a plan view, the first conductive shielding regions are adjacent four corners of the pixel array, and the second conductive shielding regions are adjacent four sides of the pixel array. The second conductive region has a length-to-width ratio greater than a length-to-width ratio of the first conductive region.

公开(公告)号：US11810939B2

公开(公告)日：2023-11-07

申请号：US17744175

申请日：2022-05-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Su-Hua Chang ,  Chia-Yu Wei ,  Zen-Fong Huang ,  Chi-Cherng Jeng

IPC: H01L27/146 ,  H01L31/0216

CPC classification number: H01L27/1464 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14687 ,  H01L31/02164

Abstract: A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

公开(公告)号：US11336814B2

公开(公告)日：2022-05-17

申请号：US16662047

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zen-Fong Huang ,  Volume Chien

IPC: H04N5/232 ,  H01L27/146 ,  H04N5/225

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

公开(公告)号：US20200059591A1

公开(公告)日：2020-02-20

申请号：US16662047

申请日：2019-10-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zen-Fong Huang ,  Volume Chien

IPC: H04N5/232 ,  H04N5/225 ,  H01L27/146

Abstract: Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

公开(公告)号：US09543352B2

公开(公告)日：2017-01-10

申请号：US14105063

申请日：2013-12-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume Chien ,  Zen-Fong Huang ,  Chia-Yu Wei ,  Chi-Cherng Jeng ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14689

Abstract: A backside illuminated CMOS image sensor and a manufacturing method thereof are provided. Embedded micro-lenses disposed respectively on concave surfaces of a buffer oxide layer, wherein the concave surfaces are positioned to respectively align with photodiodes of pixel array of the CMOS image sensor. The embedded micro-lenses can confine incident light to the photodiodes to reduce optical crosstalk between adjacent pixels.

Abstract translation: 提供背面照明CMOS图像传感器及其制造方法。 分别设置在缓冲氧化物层的凹面上的嵌入式微透镜，其中凹面被分别对准与CMOS图像传感器的像素阵列的光电二极管对准。 嵌入式微透镜可以将入射光限制在光电二极管上，以减少相邻像素之间的光学串扰。