公开(公告)号：US20040043624A1

公开(公告)日：2004-03-04

申请号：US10235193

申请日：2002-09-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chao-Jie Tsai ,  Jeng Yang Pan ,  Chin-Nan Wu ,  Meng-Chang Liu ,  Su-Yu Yeh

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/32134 ,  H01L21/28518

Abstract: A method for forming salicides with lower sheet resistance and increased sheet resistance uniformity over a semiconductor process wafer including providing a semiconductor process wafer having exposed silicon containing areas at a process surface; depositing a metal layer including at least one of cobalt and titanium over the process surface; carrying out at least one thermal annealing process to react the metal layer and silicon to form a metal silicide over the silicon containing areas; and, wet etching unsilicided areas of the metal layer with a wet etching solution including phosphoric acid (H3PO4), nitric acid (HNO3), and a carboxylic acid to leave salicides covering silicon containing areas at the process surface.

Abstract translation: 一种用于在半导体工艺晶片上形成具有较低的薄层电阻和增加的薄层电阻均匀性的硫化物的方法，包括提供在处理表面具有暴露的含硅区域的半导体工艺晶片; 在工艺表面上沉积包括钴和钛中的至少一种的金属层; 执行至少一个热退火工艺以使金属层和硅反应以在含硅区域上形成金属硅化物; 并用含有磷酸（H 3 PO 4），硝酸（HNO 3）和羧酸的湿蚀刻溶液湿法蚀刻金属层的无硅区域，以留下在工艺表面覆盖含硅区域的水杨酸盐。

公开(公告)号：US20020134514A1

公开(公告)日：2002-09-26

申请号：US09815216

申请日：2001-03-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Yu Yeh ,  Huai-Tei Yang ,  Cheng-Yang Pan ,  Jun-Yang Lai

IPC: C23F001/00

CPC classification number: H01L21/67017

Abstract: A wafer chuck for use in a semiconductor process chamber capable of producing an inert gas blanket positioned on the chuck from residual chemical vapor in the chamber is disclosed. A plurality of mounting pins for supporting a wafer is further provided in the upper surface for forming an inert gas into a cavity formed between the wafer and the upper surface of the chuck. A plurality of apertures in a sidewall of the body portion for flowing an inert gas into the lower chamber forming an inert gas blanket blocking a passageway between the upper and lower chambers, thus preventing the wafer from damage by residual chemical vapor in the lower chamber.

Abstract translation: 公开了一种用于半导体处理室的晶片卡盘，其能够从腔室中的残留化学蒸气产生位于卡盘上的惰性气体覆盖层。 用于支撑晶片的多个安装销还设置在上表面中，用于将惰性气体形成在晶片和卡盘的上表面之间形成的空腔中。 在主体部分的侧壁中的多个孔，用于使惰性气体流入下室，形成惰性气体覆盖层，阻挡上部和下部腔室之间的通道，从而防止晶片受到下部腔室中残留的化学气体的损害。

公开(公告)号：US20020194689A1

公开(公告)日：2002-12-26

申请号：US09886810

申请日：2001-06-21

Applicant: Taiwan Semiconductor Manufacturing Co.,Ltd.

Inventor： Jeng-Yang Pan ,  Chia-Chun WU ,  Wen-Fang Tang ,  Su-Yu Yeh ,  Huai-Tei Yang

IPC: B08B011/02

CPC classification number: B08B1/04 ,  B08B3/02 ,  Y10T279/11

Abstract: A method for eliminating wafer breakage during a wafer transfer process in a grinding apparatus by a wafer transfer pad and an apparatus for conducting such method are disclosed. In the method, a surface of the vacuum pad, or the wafer transfer pad, that is formed of sintered ceramic is first cleaned by contacting a rotating brush and a spray of cleaning solvent. The invention further discloses an apparatus for eliminating wafer breakage during the wafer transfer process by a vacuum pad by incorporating a pressure regulating valve situated in the vacuum conduit such that a vacuum pressure applied can be regulated at a rate not higher than 30 psi/sec. to the surface of the wafer transfer pad.

Abstract translation: 公开了一种通过晶片传送垫和用于进行这种方法的装置在研磨装置中的晶片转移处理期间消除晶片断裂的方法。 在该方法中，首先通过旋转刷和清洁溶剂喷雾来清洁由烧结陶瓷形成的真空垫或晶片传送垫的表面。 本发明还公开了一种用于通过结合位于真空管道中的压力调节阀，通过真空垫在晶片转移过程中消除晶片断裂的设备，使得施加的真空压力可以以不高于30psi / sec的速率进行调节。 到晶片传送垫的表面。