Wafer chuck for producing an inert gas blanket and method for using
    1.
    发明申请
    Wafer chuck for producing an inert gas blanket and method for using 失效
    用于生产惰性气体毯的晶片卡盘及其使用方法

    公开(公告)号:US20020134514A1

    公开(公告)日:2002-09-26

    申请号:US09815216

    申请日:2001-03-22

    CPC classification number: H01L21/67017

    Abstract: A wafer chuck for use in a semiconductor process chamber capable of producing an inert gas blanket positioned on the chuck from residual chemical vapor in the chamber is disclosed. A plurality of mounting pins for supporting a wafer is further provided in the upper surface for forming an inert gas into a cavity formed between the wafer and the upper surface of the chuck. A plurality of apertures in a sidewall of the body portion for flowing an inert gas into the lower chamber forming an inert gas blanket blocking a passageway between the upper and lower chambers, thus preventing the wafer from damage by residual chemical vapor in the lower chamber.

    Abstract translation: 公开了一种用于半导体处理室的晶片卡盘,其能够从腔室中的残留化学蒸气产生位于卡盘上的惰性气体覆盖层。 用于支撑晶片的多个安装销还设置在上表面中,用于将惰性气体形成在晶片和卡盘的上表面之间形成的空腔中。 在主体部分的侧壁中的多个孔,用于使惰性气体流入下室,形成惰性气体覆盖层,阻挡上部和下部腔室之间的通道,从而防止晶片受到下部腔室中残留的化学气体的损害。

    HOOP SUPPORT FOR SEMICONDUCTOR WAFER
    2.
    发明申请
    HOOP SUPPORT FOR SEMICONDUCTOR WAFER 失效
    用于SEMICONDUCTOR WAFER的HOOP支持

    公开(公告)号:US20030230237A1

    公开(公告)日:2003-12-18

    申请号:US10170957

    申请日:2002-06-13

    CPC classification number: H01L21/68735 H01L21/6875 Y10S269/903

    Abstract: An improved hoop support for semiconductor wafers reduces contamination of the wafer during edge beveling operations through the use of support pins that make only line contact with the wafer. The support pins are spaced around the periphery of the hoop and possess a triangular cross section. Two intersecting sides of the pins form an edge that defines the line contact with the wafer. These intersecting sides are preferably inclined relative to the wafer at an angle of between 60 and 80 degrees.

    Abstract translation: 用于半导体晶片的改进的环形支撑通过使用仅与晶片线接触的支撑销来减少边缘斜切操作期间晶片的污染。 支撑销围绕环的周边间隔开并且具有三角形横截面。 销的两个相交的侧面形成限定与晶片的线接触的边缘。 这些相交侧优选以60度和80度之间的角度相对于晶片倾斜。

    METHOD AND APPARATUS FOR ELIMINATING WAFER BREAKAGE DURING WAFER TRANSFER BY A VACUUM PAD
    3.
    发明申请
    METHOD AND APPARATUS FOR ELIMINATING WAFER BREAKAGE DURING WAFER TRANSFER BY A VACUUM PAD 有权
    用于消除由真空垫片传输的波浪中的波形破裂的方法和装置

    公开(公告)号:US20020194689A1

    公开(公告)日:2002-12-26

    申请号:US09886810

    申请日:2001-06-21

    CPC classification number: B08B1/04 B08B3/02 Y10T279/11

    Abstract: A method for eliminating wafer breakage during a wafer transfer process in a grinding apparatus by a wafer transfer pad and an apparatus for conducting such method are disclosed. In the method, a surface of the vacuum pad, or the wafer transfer pad, that is formed of sintered ceramic is first cleaned by contacting a rotating brush and a spray of cleaning solvent. The invention further discloses an apparatus for eliminating wafer breakage during the wafer transfer process by a vacuum pad by incorporating a pressure regulating valve situated in the vacuum conduit such that a vacuum pressure applied can be regulated at a rate not higher than 30 psi/sec. to the surface of the wafer transfer pad.

    Abstract translation: 公开了一种通过晶片传送垫和用于进行这种方法的装置在研磨装置中的晶片转移处理期间消除晶片断裂的方法。 在该方法中,首先通过旋转刷和清洁溶剂喷雾来清洁由烧结陶瓷形成的真空垫或晶片传送垫的表面。 本发明还公开了一种用于通过结合位于真空管道中的压力调节阀,通过真空垫在晶片转移过程中消除晶片断裂的设备,使得施加的真空压力可以以不高于30psi / sec的速率进行调节。 到晶片传送垫的表面。

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