公开(公告)号：US20200090938A1

公开(公告)日：2020-03-19

申请号：US16685800

申请日：2019-11-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： SHIU-KO JANGJIAN ,  TING-CHUN WANG ,  CHI-CHERNG JENG ,  CHI-WEN LIU

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161

摘要： Gate stacks for improving integrated circuit device performance and methods for fabricating such gate stacks are disclosed herein. An exemplary gate stack includes a gate dielectric layer disposed over the substrate, a multi-function layer disposed over the gate dielectric layer, and a work function layer disposed over the multi-function layer. The multi-function layer includes a first metal nitride sub-layer having a first nitrogen (N) concentration and a second metal nitride material with a second metal nitride sub-layer having a second N concentration. The second metal nitride sub-layer is disposed over the first metal nitride-sub layer and the first N concentration is greater than the second N concentration. In some implementations, the second N concentration is from about 2% to about 5% and the first N concentration is from about 5% to about 15%.

公开(公告)号：US20190006183A1

公开(公告)日：2019-01-03

申请号：US16042527

申请日：2018-07-23

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： SHIU-KO JANGJIAN ,  TING-CHUN WANG ,  CHI-CHERNG JENG ,  CHI-WEN LIU

IPC分类号： H01L21/28 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66 ,  H01L29/16 ,  H01L29/161 ,  H01L29/08 ,  H01L29/165 ,  H01L29/78

CPC分类号： H01L21/28088 ,  H01L21/02183 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

摘要： Gate stacks for improving integrated circuit device performance and methods for fabricating such gate stacks are disclosed herein. An exemplary method includes forming a gate stack over a substrate and at least partially removing the gate stack, thereby forming an opening. A multi-function layer is deposited in the opening and a work function layer is deposited over the multi-function layer. The multi-function layer includes nitrogen and one of titanium or tantalum. The work function layer includes nitrogen and one of titanium or tantalum. A concentration of the nitrogen of the work function layer is different than a concentration of the nitrogen of the multi-function layer. In some implementations, the concentration of the nitrogen of the work function layer from about 2% to about 5% and the concentration of the nitrogen of the multi-function layer from about 5% to about 15%.

公开(公告)号：US20160254157A1

公开(公告)日：2016-09-01

申请号：US15149978

申请日：2016-05-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： SHIU-KO JANGJIAN ,  TING-CHUN WANG ,  CHI-CHERNG JENG ,  CHI-WEN LIU

IPC分类号： H01L21/28 ,  H01L29/49 ,  H01L29/78 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66 ,  H01L29/08

CPC分类号： H01L21/28088 ,  H01L21/02183 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

摘要： A method includes forming a gate stack over a semiconductor substrate; forming an interlayer dielectric layer surrounding the gate stack; and at least partially removing the gate stack, thereby forming an opening. The method further includes forming a multi-function wetting/blocking layer in the opening, a work function layer over the multi-function blocking/wetting layer, and a conductive layer over the work function layer. The work function layer, the multi-function wetting/blocking layer, and the conductive layer fill the opening. The multi-function wetting/blocking layer includes aluminum, carbon, nitride, and one of: titanium and tantalum.

摘要翻译： 一种方法包括在半导体衬底上形成栅叠层; 形成围绕所述栅叠层的层间绝缘层; 并且至少部分地移除栅极堆叠，从而形成开口。 该方法还包括在开口中形成多功能润湿/阻挡层，在多功能阻挡/润湿层上形成功函数层，以及在功函数层上形成导电层。 工作功能层，多功能润湿/阻挡层和导电层填充开口。 多功能润湿/阻挡层包括铝，碳，氮化物，以及钛和钽之一。