公开(公告)号：US20240310744A1

公开(公告)日：2024-09-19

申请号：US18671174

申请日：2024-05-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chung-Hsuan LIU ,  Chen-Yang LIN ,  Ku-Hsiang SUNG ,  Da-Wei YU ,  Kuan-Wen LIN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F7/00 ,  B08B7/00 ,  B08B13/00 ,  H01L21/02 ,  H01L21/66 ,  H05H1/00

CPC classification number: G03F7/70925 ,  B08B7/0035 ,  B08B13/00 ,  H01L21/02057 ,  H01L22/12 ,  H05H1/01

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

公开(公告)号：US20220308464A1

公开(公告)日：2022-09-29

申请号：US17367835

申请日：2021-07-06

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chung-Hsuan LIU ,  Chen-Yang LIN ,  Ku-Hsiang SUNG ,  Da-Wei YU ,  Kuan-Wen LIN ,  Chia-Jen CHEN ,  Hsin-Chang LEE

IPC: G03F7/20 ,  B08B7/00 ,  B08B13/00 ,  H01L21/02 ,  H01L21/66 ,  H05H1/00

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.