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公开(公告)号：US20230314963A1
公开(公告)日：2023-10-05
申请号：US18200951
申请日：2023-05-23
发明人： Chen-Yang LIN , Da-Wei YU , Li-Hsin WANG , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
CPC分类号： G03F7/70925 , G03F1/22 , G03F1/82
摘要： A photolithographic apparatus includes a particle removing cassette, a pump and a compressor. The particle removing cassette includes a first slit that includes an array of parallel wind blade nozzles arranged along a length of the first slit, protruding from the first slit, and configured to eject and direct pressurized cleaning material to a patterning surface of a mask to remove debris particles on the patterning surface. The pump and the compressor are controlled by a controller to adjust a flow rate and a pressure of the pressurized cleaning material based on an amount of debris particles on the patterning surface of the mask.
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公开(公告)号：US20220308464A1
公开(公告)日：2022-09-29
申请号：US17367835
申请日：2021-07-06
发明人： Chung-Hsuan LIU , Chen-Yang LIN , Ku-Hsiang SUNG , Da-Wei YU , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
摘要： In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.
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公开(公告)号：US20240310744A1
公开(公告)日：2024-09-19
申请号：US18671174
申请日：2024-05-22
发明人： Chung-Hsuan LIU , Chen-Yang LIN , Ku-Hsiang SUNG , Da-Wei YU , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
CPC分类号： G03F7/70925 , B08B7/0035 , B08B13/00 , H01L21/02057 , H01L22/12 , H05H1/01
摘要： In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.
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公开(公告)号：US20220252993A1
公开(公告)日：2022-08-11
申请号：US17713012
申请日：2022-04-04
发明人： Chen-Yang LIN , Da-Wei YU , Li-Hsin WANG , Kuan-Wen LIN , Chia-Jen CHEN , Hsin-Chang LEE
摘要： An photolithographic apparatus includes a particle removing cassette selectively extendable from the processing apparatus. The particle removing cassette includes a wind blade slit and an exhausting slit. The wind blade slit is configured to direct pressurized cleaning material to a surface of the mask to remove the debris particles from the surface of the mask. The exhausting slit collects the debris particles separated from the surface of the mask and contaminants through the exhaust line. In some embodiments, the wind blade slit includes an array of wind blade nozzles spaced apart within the wind blade slit. In some embodiments, the exhausting slit includes array of exhaust lines spaced apart within the exhausting slit.
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